M29W160ET70N3F vs M29W160EB80ZA3SE 对比

详细并排对比 M29W160ET70N3F 出自 Micron Technology 和 M29W160EB80ZA3SE 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29W160ET70N3F M29W160ET70N3F - 16Mb 70ns AEC-Q100 NOR Flash | Micron

M29W160ET70N3F - 16Mb 70ns AEC-Q100 NOR Flash | Micron

M29W160ET70N3F ✓ 量产中
Micron Technology
M29W160EB80ZA3SE M29W160EB80ZA3SE - 16Mb NOR Flash 80ns TFBGA-48 | Micron

M29W160EB80ZA3SE - 16Mb NOR Flash 80ns TFBGA-48 | Micron

M29W160EB80ZA3SE ✓ 量产中

规格对比

参数 M29W160ET70N3F M29W160EB80ZA3SE
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.80 $1.35
存储器类型 Parallel NOR Flash NOR Flash (Parallel)
存储容量 16 Mbit (2 M x 8 / 1 M x 16) 16 Mbit (2M x8 / 1M x16)
Access Time 70 ns 80 ns
电源电压 3 V / 3.3 V 2.7 V to 3.6 V
Technology CMOS —
Boot Block Architecture Top boot —
Bus Configuration x8 / x16 selectable —
封装 48-pin TSOP 48-TFBGA (6x8 mm, 0.8 mm ball pitch)
安装类型 Surface Mount Surface Mount (BGA)
Temperature Grade Automotive (AEC-Q100) —
Qualification AEC-Q100 qualified AEC-Q100 (automotive grade per datasheets.com listing)
Packaging Tape and Reel Tape & Reel (TR)
RoHS 状态 RoHS-compliant package (F option) Pb-free (SE suffix)
Programming Interface Parallel command set —
Number of Terminals 48 —
接口 — Parallel (Byte-wide / Word-wide)
存储组织 — 16 Mbit Boot Block, x8/x16 selectable
工作温度 — -40C to +125C
Programming Supply — Single 3V supply for program, erase and read
Technology Family — M29W160EB (3rd generation M29W series)
Data Retention — [DATA_NEEDED: data retention]
Erase Block Architecture — Boot block (parameter and main blocks)
Program/Erase Cycles — [DATA_NEEDED: program/erase endurance cycles]
Moisture Sensitivity Level — [DATA_NEEDED: MSL level]

数据手册与资源

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