M29W400FT55N3F vs M29F400FB55N3F2 Vergleich
Detaillierter Direktvergleich von M29W400FT55N3F von Micron Technology und M29F400FB55N3F2 von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | M29W400FT55N3F | M29F400FB55N3F2 |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,92 | $2,95 |
| Speichertyp | NOR Flash | NOR Flash |
| Speichergröße | 4 Mbit | — |
| Schnittstelle | Parallel | Parallel |
| Access Time | 55 ns | 55 ns |
| Bus Configuration | x8 / x16 (BYTE-selectable) | — |
| Speicherorganisation | 4Mbit, block-organized, top boot block | 256K x 16 / 512K x 8 |
| Program/Erase | Block erase, word/byte program | — |
| Gehäuse | 48-TSOP I | 48-TSOP I |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Versorgungsspannung | [DATA_NEEDED: supply voltage range] | 5 V |
| Suspend/Resume | Erase/program suspend and resume | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Data Retention | [DATA_NEEDED: data retention] | [DATA_NEEDED: retention years] |
| Packaging | Tape & Reel (TR suffix) | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | Compliant (lead-free build per F2 suffix) |
| Prefix F in MPN | Pb-free package suffix | — |
| Density | — | 4 Mbit (4194 kbit) |
| Boot Block | — | Bottom boot block |
| Program/Erase Controller | — | Embedded byte/word program algorithms |
| Standard Package Quantity | — | 1500 units (Tape & Reel) |
| Active/Standby Current | — | [DATA_NEEDED: active and standby current] |
| Erase/Program Endurance | — | [DATA_NEEDED: endurance cycles] |
| VIO Range | — | [DATA_NEEDED: I/O voltage range] |