M29W400FT55N3F vs M29F800FB55M3F2 Vergleich
Detaillierter Direktvergleich von M29W400FT55N3F von Micron Technology und M29F800FB55M3F2 von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | M29W400FT55N3F | M29F800FB55M3F2 |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,92 | $3,72 |
| Speichertyp | NOR Flash | NOR Flash, Parallel |
| Speichergröße | 4 Mbit | — |
| Schnittstelle | Parallel | Parallel, Asynchronous |
| Access Time | 55 ns | 55 ns |
| Bus Configuration | x8 / x16 (BYTE-selectable) | — |
| Speicherorganisation | 4Mbit, block-organized, top boot block | 512K x 16-bit / 1M x 8-bit |
| Program/Erase | Block erase, word/byte program | — |
| Gehäuse | 48-TSOP I | 44-pin SO (SOIC-44) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Versorgungsspannung | [DATA_NEEDED: supply voltage range] | — |
| Suspend/Resume | Erase/program suspend and resume | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | [DATA_NEEDED: program/erase endurance cycles] |
| Data Retention | [DATA_NEEDED: data retention] | — |
| Packaging | Tape & Reel (TR suffix) | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Prefix F in MPN | Pb-free package suffix | — |
| Density | — | 8389 kbits (8 Mbit) |
| Number of Words | — | 512 k |
| Bits per Word | — | 16 bits |
| Supply Voltage (VCC) | — | 5 V |
| Boot Block Type | — | Bottom Boot Block |
| Programming | — | Embedded byte/word program algorithms |
| OTP Area | — | 64 byte |
| Automotive Qualification | — | Auto Grade 3 (temperature grade 3, +125C) |
| Packing | — | Tape & Reel (T/R) |