M29W800FB70N3E vs M29F800FT55N3E2 Vergleich
Detaillierter Direktvergleich von M29W800FB70N3E von Micron Technology und M29F800FT55N3E2 von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | M29W800FB70N3E | M29F800FT55N3E2 |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,95 | $4,98 |
| Speichertyp | NOR Flash | NOR Flash |
| Density | 8 Mbit (8388608 bits) | 8389 kbits |
| Speicherorganisation | 512K x 16 / 1M x 8 | — |
| Datenbusbreite | x8/x16 (BYTE# selectable) | — |
| Access Time | 70 ns | 55 ns |
| Supply Voltage (VCC) | up to 3.6 V for program, erase and read | — |
| Programming Time | 10 us per byte/word (typical) | — |
| Memory Blocks | 19 blocks, 1 boot block (bottom - FB configuration) | — |
| Schnittstelle | Parallel | Parallel |
| Betriebstemperatur | -40C to +125C | -40C to +125C |
| Gehäuse | 48-TSOP (12 x 20 mm), TSOP I | 48-TSOP I |
| Pin-Anzahl | 48 | — |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | RoHS compliant (plastic TSOP-48) | Compliant (E suffix = lead-free/RoHS) |
| Product Longevity Program | No | — |
| FBGA Code | N/A | — |
| Chipset Validation | N/A | — |
| Memory Organization | — | 512K x 16 (8 Mbit) |
| Versorgungsspannung | — | 5 V |
| Boot Block Architecture | — | Top Boot Block |
| Word/Byte Configuration | — | BYTE# pin selectable (16-bit / 8-bit) |
| Hardware Reset / Power-Down | — | RP# pin |
| Embedded Program/Erase Controller | — | Yes (byte/word program, block erase) |
| Program/Erase Endurance | — | 100,000 cycles per block (typical for family) |
| Data Retention | — | >20 years (typical for family) |
| Ready/Busy Output | — | Yes |