M29W800FT70N3E vs M29W800FB70N3E Vergleich
Detaillierter Direktvergleich von M29W800FT70N3E von Micron Technology und M29W800FB70N3E von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | M29W800FT70N3E | M29W800FB70N3E |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Flash | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,05 | $0,95 |
| Speichertyp | NOR Flash (Parallel) | NOR Flash |
| Density | 8 Mbit | 8 Mbit (8388608 bits) |
| Speicherorganisation | 1M x 8 / 512K x 16 | 512K x 16 / 1M x 8 |
| Access Time | 70 ns | 70 ns |
| Supply Voltage (VCC) | 2.7 V to 3.6 V | up to 3.6 V for program, erase and read |
| Programming / Erase Supply | Single supply at VCC (2.7 V to 3.6 V) | — |
| Boot Block Location | Top boot block (FT variant) | — |
| Bus Width | 8-bit or 16-bit (BYTE pin selectable) | — |
| Schnittstelle | Parallel, address/data bus | Parallel |
| Betriebstemperatur | -40C to +125C | -40C to +125C |
| Gehäuse | 48-TSOP I (12 x 20 mm, 0.5 mm pitch) | 48-TSOP (12 x 20 mm), TSOP I |
| Montageart | Surface Mount | Surface Mount |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Program/Erase Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Data Retention | [DATA_NEEDED: data retention] | — |
| Block Organization | [DATA_NEEDED: block size/organization] | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | RoHS compliant (plastic TSOP-48) |
| Datenbusbreite | — | x8/x16 (BYTE# selectable) |
| Programming Time | — | 10 us per byte/word (typical) |
| Memory Blocks | — | 19 blocks, 1 boot block (bottom - FB configuration) |
| Pin-Anzahl | — | 48 |
| Product Longevity Program | — | No |
| FBGA Code | — | N/A |
| Chipset Validation | — | N/A |