MC33887PEK vs MC33887PEKR2 Vergleich
Detaillierter Direktvergleich von MC33887PEK von NXP Semiconductors und MC33887PEKR2 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MC33887PEK - 5A H-Bridge DC Motor Driver, 5-28V | NXP
MC33887PEK ⚠ Letzte Bestellmöglichkeit
Spezifikationsvergleich
| Parameter | MC33887PEK | MC33887PEKR2 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | Motor Drivers | Motor Drivers |
| Lebenszyklusstatus | Letzte Kaufgelegenheit | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $4,82 | $5,05 |
| Ausgangskonfiguration | H-Bridge (full bridge) | — |
| Motor Type | Brushed DC | — |
| Supply Voltage (VPWR/VCC) | 5 V to 28 V | — |
| Continuous Output Current | 5.0 A | 5.0 A |
| Peak Output Current | 8.0 A (pulse) | 8.0 A |
| RDS(on) per MOSFET (typ) | 120 mOhm at 25 C | — |
| Current Feedback Ratio | 1/375 of high-side load current | — |
| Sleep Mode Current | < 50 uA typical | < 50 uA (typ) [DATA_NEEDED: exact datasheet value] |
| Logic Input Compatibility | TTL / CMOS | — |
| PWM Frequency (recommended) | [DATA_NEEDED: PWM frequency max] | — |
| Betriebstemperatur | -40 C to +125 C | — |
| Gehäuse | 54-SOIC-EP (HSOP-54) with exposed thermal pad | — |
| Thermal Resistance (junction-to-case) | approximately 1 C/W | — |
| Protection Features | Thermal shutdown, cross-conduction prevention, internal current limit | — |
| Charge Pump | Internal (supports 100% duty cycle) | — |
| AEC-Q100 Qualification | Qualified (automotive grade) | Yes (automotive grade) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | [DATA_NEEDED: MSL rating] | — |
| Lead-Free / RoHS | Lead-free; RoHS compliance per NXP product page | Yes (lead-free, RoHS compliant) |
| Tube Quantity | 27 per tube | — |
| Funktion | — | H-Bridge motor driver for brushed DC motors |
| Topologie | — | Monolithic H-Bridge with integrated MOSFETs and charge pump |
| Load Supply Voltage (VLOAD) | — | 5 V to 28 V |
| Logic Supply Voltage (VDD) | — | 3.0 V to 5.5 V |
| Rds(on) (per FET, typ @ 25C) | — | 150 mOhm [DATA_NEEDED: exact value from datasheet] |
| Current Sense Output | — | Yes, ratiometric analog feedback |
| PWM Frequency Range | — | Up to 20 kHz [DATA_NEEDED: max PWM freq] |
| Betriebstemperaturbereich | — | -40C to +125C |
| Gehäuse / Bauform | — | 54-SOICW-EP (Power SOIC with exposed pad) |