MC33887PEK vs MC33887PEKR2 Comparación
Comparación detallada lado a lado de MC33887PEK por NXP Semiconductors y MC33887PEKR2 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | MC33887PEK | MC33887PEKR2 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | Motor Drivers | Motor Drivers |
| Estado del ciclo de vida | Última compra | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $4,82 | $5,05 |
| Configuración de salida | H-Bridge (full bridge) | — |
| Motor Type | Brushed DC | — |
| Supply Voltage (VPWR/VCC) | 5 V to 28 V | — |
| Continuous Output Current | 5.0 A | 5.0 A |
| Peak Output Current | 8.0 A (pulse) | 8.0 A |
| RDS(on) per MOSFET (typ) | 120 mOhm at 25 C | — |
| Current Feedback Ratio | 1/375 of high-side load current | — |
| Sleep Mode Current | < 50 uA typical | < 50 uA (typ) [DATA_NEEDED: exact datasheet value] |
| Logic Input Compatibility | TTL / CMOS | — |
| PWM Frequency (recommended) | [DATA_NEEDED: PWM frequency max] | — |
| Temperatura de funcionamiento | -40 C to +125 C | — |
| Encapsulado | 54-SOIC-EP (HSOP-54) with exposed thermal pad | — |
| Thermal Resistance (junction-to-case) | approximately 1 C/W | — |
| Protection Features | Thermal shutdown, cross-conduction prevention, internal current limit | — |
| Charge Pump | Internal (supports 100% duty cycle) | — |
| AEC-Q100 Qualification | Qualified (automotive grade) | Yes (automotive grade) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | [DATA_NEEDED: MSL rating] | — |
| Lead-Free / RoHS | Lead-free; RoHS compliance per NXP product page | Yes (lead-free, RoHS compliant) |
| Tube Quantity | 27 per tube | — |
| Función | — | H-Bridge motor driver for brushed DC motors |
| Topología | — | Monolithic H-Bridge with integrated MOSFETs and charge pump |
| Load Supply Voltage (VLOAD) | — | 5 V to 28 V |
| Logic Supply Voltage (VDD) | — | 3.0 V to 5.5 V |
| Rds(on) (per FET, typ @ 25C) | — | 150 mOhm [DATA_NEEDED: exact value from datasheet] |
| Current Sense Output | — | Yes, ratiometric analog feedback |
| PWM Frequency Range | — | Up to 20 kHz [DATA_NEEDED: max PWM freq] |
| Rango de temperatura de funcionamiento | — | -40C to +125C |
| Encapsulado / Carcasa | — | 54-SOICW-EP (Power SOIC with exposed pad) |