MC33887PEK vs MC33887PEKR2 对比
详细并排对比 MC33887PEK 出自 NXP Semiconductors 和 MC33887PEKR2 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MC33887PEK | MC33887PEKR2 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | Motor Drivers | Motor Drivers |
| 生命周期状态 | 最后采购期 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $4.82 | $5.05 |
| 输出配置 | H-Bridge (full bridge) | — |
| Motor Type | Brushed DC | — |
| Supply Voltage (VPWR/VCC) | 5 V to 28 V | — |
| Continuous Output Current | 5.0 A | 5.0 A |
| Peak Output Current | 8.0 A (pulse) | 8.0 A |
| RDS(on) per MOSFET (typ) | 120 mOhm at 25 C | — |
| Current Feedback Ratio | 1/375 of high-side load current | — |
| Sleep Mode Current | < 50 uA typical | < 50 uA (typ) [DATA_NEEDED: exact datasheet value] |
| Logic Input Compatibility | TTL / CMOS | — |
| PWM Frequency (recommended) | [DATA_NEEDED: PWM frequency max] | — |
| 工作温度 | -40 C to +125 C | — |
| 封装 | 54-SOIC-EP (HSOP-54) with exposed thermal pad | — |
| Thermal Resistance (junction-to-case) | approximately 1 C/W | — |
| Protection Features | Thermal shutdown, cross-conduction prevention, internal current limit | — |
| Charge Pump | Internal (supports 100% duty cycle) | — |
| AEC-Q100 Qualification | Qualified (automotive grade) | Yes (automotive grade) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | [DATA_NEEDED: MSL rating] | — |
| Lead-Free / RoHS | Lead-free; RoHS compliance per NXP product page | Yes (lead-free, RoHS compliant) |
| Tube Quantity | 27 per tube | — |
| 功能 | — | H-Bridge motor driver for brushed DC motors |
| 拓扑 | — | Monolithic H-Bridge with integrated MOSFETs and charge pump |
| Load Supply Voltage (VLOAD) | — | 5 V to 28 V |
| Logic Supply Voltage (VDD) | — | 3.0 V to 5.5 V |
| Rds(on) (per FET, typ @ 25C) | — | 150 mOhm [DATA_NEEDED: exact value from datasheet] |
| Current Sense Output | — | Yes, ratiometric analog feedback |
| PWM Frequency Range | — | Up to 20 kHz [DATA_NEEDED: max PWM freq] |
| 工作温度范围 | — | -40C to +125C |
| 封装 / 外壳 | — | 54-SOICW-EP (Power SOIC with exposed pad) |