MC33887PEKR2 vs MC34937APEK Vergleich
Detaillierter Direktvergleich von MC33887PEKR2 von NXP Semiconductors und MC34937APEK von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MC34937APEK - 3-Phase FET Pre-Driver, 58V, SPI, 54-SOIC-EP | NXP
MC34937APEK NrndSpezifikationsvergleich
| Parameter | MC33887PEKR2 | MC34937APEK |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | Motor Drivers | Motor Drivers |
| Lebenszyklusstatus | Aktiv | NRND |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $5,05 | $5,74 |
| Funktion | H-Bridge motor driver for brushed DC motors | — |
| Topologie | Monolithic H-Bridge with integrated MOSFETs and charge pump | Three half-bridge pre-drivers (3 high-side + 3 low-side) |
| Load Supply Voltage (VLOAD) | 5 V to 28 V | — |
| Logic Supply Voltage (VDD) | 3.0 V to 5.5 V | — |
| Continuous Output Current | 5.0 A | — |
| Peak Output Current | 8.0 A | — |
| Rds(on) (per FET, typ @ 25C) | 150 mOhm [DATA_NEEDED: exact value from datasheet] | — |
| Current Sense Output | Yes, ratiometric analog feedback | — |
| Sleep Mode Current | < 50 uA (typ) [DATA_NEEDED: exact datasheet value] | — |
| PWM Frequency Range | Up to 20 kHz [DATA_NEEDED: max PWM freq] | — |
| Betriebstemperaturbereich | -40C to +125C | -40 C to +125 C |
| Gehäuse / Bauform | 54-SOICW-EP (Power SOIC with exposed pad) | — |
| Montageart | Surface Mount | Surface Mount |
| AEC-Q100 Qualification | Yes (automotive grade) | — |
| Lead-Free / RoHS | Yes (lead-free, RoHS compliant) | — |
| Product Type | — | 3-phase FET pre-driver (gate driver) |
| Motor Type | — | Brushless DC (BLDC) / 3-phase |
| Peak Gate Drive Current | — | >1.5 A |
| Supply Voltage Range (VCC) | — | 6 V to 58 V |
| Logic Interface | — | SPI (with parallel PWM option) |
| FET Protection Features | — | Desaturation, VDS overcurrent, gate-source UV, programmable dead-time |
| Gehäuse | — | 54-SOIC-EP (WSOIC-54, 300 mil, exposed pad) |
| Technology | — | SMARTMOS mixed-signal HV-CMOS |
| Feuchtigkeitsempfindlichkeitsgrad (MSL) | — | 3 |
| Peak Reflow Temperature | — | 260 C (max 40 s) |
| Terminal Finish | — | Tin (e3, JESD-609) |
| RoHS-Status | — | Compliant |