MC33887PEKR2 vs MC34937APEK Comparaison
Comparaison détaillée côte à côte de MC33887PEKR2 par NXP Semiconductors et MC34937APEK par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MC34937APEK - 3-Phase FET Pre-Driver, 58V, SPI, 54-SOIC-EP | NXP
MC34937APEK NrndComparaison des spécifications
| Paramètre | MC33887PEKR2 | MC34937APEK |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | Motor Drivers | Motor Drivers |
| Statut du cycle de vie | Actif | NRND |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $5,05 | $5,74 |
| Fonction | H-Bridge motor driver for brushed DC motors | — |
| Topologie | Monolithic H-Bridge with integrated MOSFETs and charge pump | Three half-bridge pre-drivers (3 high-side + 3 low-side) |
| Load Supply Voltage (VLOAD) | 5 V to 28 V | — |
| Logic Supply Voltage (VDD) | 3.0 V to 5.5 V | — |
| Continuous Output Current | 5.0 A | — |
| Peak Output Current | 8.0 A | — |
| Rds(on) (per FET, typ @ 25C) | 150 mOhm [DATA_NEEDED: exact value from datasheet] | — |
| Current Sense Output | Yes, ratiometric analog feedback | — |
| Sleep Mode Current | < 50 uA (typ) [DATA_NEEDED: exact datasheet value] | — |
| PWM Frequency Range | Up to 20 kHz [DATA_NEEDED: max PWM freq] | — |
| Plage de température de fonctionnement | -40C to +125C | -40 C to +125 C |
| Boîtier / Format | 54-SOICW-EP (Power SOIC with exposed pad) | — |
| Type de montage | Surface Mount | Surface Mount |
| AEC-Q100 Qualification | Yes (automotive grade) | — |
| Lead-Free / RoHS | Yes (lead-free, RoHS compliant) | — |
| Product Type | — | 3-phase FET pre-driver (gate driver) |
| Motor Type | — | Brushless DC (BLDC) / 3-phase |
| Peak Gate Drive Current | — | >1.5 A |
| Supply Voltage Range (VCC) | — | 6 V to 58 V |
| Logic Interface | — | SPI (with parallel PWM option) |
| FET Protection Features | — | Desaturation, VDS overcurrent, gate-source UV, programmable dead-time |
| Boîtier | — | 54-SOIC-EP (WSOIC-54, 300 mil, exposed pad) |
| Technology | — | SMARTMOS mixed-signal HV-CMOS |
| Niveau de sensibilité à l'humidité (MSL) | — | 3 |
| Peak Reflow Temperature | — | 260 C (max 40 s) |
| Terminal Finish | — | Tin (e3, JESD-609) |
| Statut RoHS | — | Compliant |