MC33887PEKR2 vs MC34937APEK Comparación
Comparación detallada lado a lado de MC33887PEKR2 por NXP Semiconductors y MC34937APEK por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MC34937APEK - 3-Phase FET Pre-Driver, 58V, SPI, 54-SOIC-EP | NXP
MC34937APEK NrndComparación de especificaciones
| Parámetro | MC33887PEKR2 | MC34937APEK |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | Motor Drivers | Motor Drivers |
| Estado del ciclo de vida | Activo | NRND |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $5,05 | $5,74 |
| Función | H-Bridge motor driver for brushed DC motors | — |
| Topología | Monolithic H-Bridge with integrated MOSFETs and charge pump | Three half-bridge pre-drivers (3 high-side + 3 low-side) |
| Load Supply Voltage (VLOAD) | 5 V to 28 V | — |
| Logic Supply Voltage (VDD) | 3.0 V to 5.5 V | — |
| Continuous Output Current | 5.0 A | — |
| Peak Output Current | 8.0 A | — |
| Rds(on) (per FET, typ @ 25C) | 150 mOhm [DATA_NEEDED: exact value from datasheet] | — |
| Current Sense Output | Yes, ratiometric analog feedback | — |
| Sleep Mode Current | < 50 uA (typ) [DATA_NEEDED: exact datasheet value] | — |
| PWM Frequency Range | Up to 20 kHz [DATA_NEEDED: max PWM freq] | — |
| Rango de temperatura de funcionamiento | -40C to +125C | -40 C to +125 C |
| Encapsulado / Carcasa | 54-SOICW-EP (Power SOIC with exposed pad) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| AEC-Q100 Qualification | Yes (automotive grade) | — |
| Lead-Free / RoHS | Yes (lead-free, RoHS compliant) | — |
| Product Type | — | 3-phase FET pre-driver (gate driver) |
| Motor Type | — | Brushless DC (BLDC) / 3-phase |
| Peak Gate Drive Current | — | >1.5 A |
| Supply Voltage Range (VCC) | — | 6 V to 58 V |
| Logic Interface | — | SPI (with parallel PWM option) |
| FET Protection Features | — | Desaturation, VDS overcurrent, gate-source UV, programmable dead-time |
| Encapsulado | — | 54-SOIC-EP (WSOIC-54, 300 mil, exposed pad) |
| Technology | — | SMARTMOS mixed-signal HV-CMOS |
| Nivel de sensibilidad a la humedad (MSL) | — | 3 |
| Peak Reflow Temperature | — | 260 C (max 40 s) |
| Terminal Finish | — | Tin (e3, JESD-609) |
| Estado RoHS | — | Compliant |