MC33937APEK vs MC33937APEK574 Vergleich
Detaillierter Direktvergleich von MC33937APEK von NXP Semiconductors und MC33937APEK574 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MC33937APEK - 3-Phase FET Pre-Driver, 1.5A, 40V, SPI | NXP
MC33937APEK ✗ AbgekündigtNXP Semiconductors
MC33937APEK574 - 3-Phase FET Pre-Driver, 1.5A Gate, 40V, SPI | NXP
MC33937APEK574 ✓ AktivSpezifikationsvergleich
| Parameter | MC33937APEK | MC33937APEK574 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | Motor Drivers | Motor Drivers |
| Lebenszyklusstatus | Ende des Lebenszyklus | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,78 | $3,13 |
| Product Type | 3-phase FET pre-driver (gate driver) | — |
| Anzahl der Ausgänge | 6 (3 high-side + 3 low-side) | — |
| Supply Voltage (Vdd) | 5 V typical logic supply | — |
| Battery / VPS Voltage Range | 6 V to 40 V (load-dump tolerant) | — |
| Gate Drive Current | greater than 1.5 A peak | — |
| Schnittstelle | SPI (Serial Peripheral Interface) | — |
| Integrated Protections | FET short-circuit / desaturation, over-current, undervoltage | — |
| Ausgangskonfiguration | Three half-bridge gate drivers for external N-channel MOSFETs | — |
| Dead-Time Control | Programmable via SPI | — |
| Charge Pump | Integrated for high-side gate supply (VLS, VLS_CAP) | Integrated (100% duty-cycle capable) |
| Betriebstemperaturbereich | -40 C to +125 C | [DATA_NEEDED: operating temp range] |
| Gehäuse | 54-pin SOIC-EP (exposed pad) | 54-SOIC-EP (exposed pad) |
| Montageart | Surface Mount | Surface Mount |
| Technology | SMARTMOS mixed-signal | — |
| RoHS-Status | [DATA_NEEDED: RoHS compliance] | [DATA_NEEDED: RoHS status] |
| Automotive Qualification | AEC-Q100 qualified (per NXP product family page) | — |
| Funktion | — | 3-Phase FET Pre-Driver |
| Topology Driven | — | Three-phase N-channel MOSFET bridge (6 FETs) |
| Peak Gate Drive Current | — | >1.5 A (typ) |
| Supply Voltage (VCC / VDD) | — | 40 V max |
| Operating VDD | — | [DATA_NEEDED: VDD operating range] |
| Bootstrap Supply (VBS) | — | [DATA_NEEDED: VBS voltage range] |
| Gate Drive Voltage | — | [DATA_NEEDED: VGS drive voltage] |
| Communication Interface | — | SPI (daisy-chain capable) |
| Number of Phases | — | 3 |
| Number of Channels (HS+LS) | — | 6 (3 high-side + 3 low-side) |
| Short-Circuit Protection | — | Desaturation detection (programmable threshold) |
| Dead-Time Adjustment | — | Programmable via SPI/external resistor |
| MSL-Level | — | [DATA_NEEDED: MSL level] |
| AEC-Q100 Qualification | — | [DATA_NEEDED: AEC-Q100 grade] |