MC33937APEK vs MC33937APEK574 Comparación
Comparación detallada lado a lado de MC33937APEK por NXP Semiconductors y MC33937APEK574 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MC33937APEK - 3-Phase FET Pre-Driver, 1.5A, 40V, SPI | NXP
MC33937APEK ✗ Fin de vidaNXP Semiconductors
MC33937APEK574 - 3-Phase FET Pre-Driver, 1.5A Gate, 40V, SPI | NXP
MC33937APEK574 ✓ ActivoComparación de especificaciones
| Parámetro | MC33937APEK | MC33937APEK574 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | Motor Drivers | Motor Drivers |
| Estado del ciclo de vida | Fin de vida | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $3,78 | $3,13 |
| Product Type | 3-phase FET pre-driver (gate driver) | — |
| Número de salidas | 6 (3 high-side + 3 low-side) | — |
| Supply Voltage (Vdd) | 5 V typical logic supply | — |
| Battery / VPS Voltage Range | 6 V to 40 V (load-dump tolerant) | — |
| Gate Drive Current | greater than 1.5 A peak | — |
| Interfaz | SPI (Serial Peripheral Interface) | — |
| Integrated Protections | FET short-circuit / desaturation, over-current, undervoltage | — |
| Configuración de salida | Three half-bridge gate drivers for external N-channel MOSFETs | — |
| Dead-Time Control | Programmable via SPI | — |
| Charge Pump | Integrated for high-side gate supply (VLS, VLS_CAP) | Integrated (100% duty-cycle capable) |
| Rango de temperatura de funcionamiento | -40 C to +125 C | [DATA_NEEDED: operating temp range] |
| Encapsulado | 54-pin SOIC-EP (exposed pad) | 54-SOIC-EP (exposed pad) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | SMARTMOS mixed-signal | — |
| Estado RoHS | [DATA_NEEDED: RoHS compliance] | [DATA_NEEDED: RoHS status] |
| Automotive Qualification | AEC-Q100 qualified (per NXP product family page) | — |
| Función | — | 3-Phase FET Pre-Driver |
| Topology Driven | — | Three-phase N-channel MOSFET bridge (6 FETs) |
| Peak Gate Drive Current | — | >1.5 A (typ) |
| Supply Voltage (VCC / VDD) | — | 40 V max |
| Operating VDD | — | [DATA_NEEDED: VDD operating range] |
| Bootstrap Supply (VBS) | — | [DATA_NEEDED: VBS voltage range] |
| Gate Drive Voltage | — | [DATA_NEEDED: VGS drive voltage] |
| Communication Interface | — | SPI (daisy-chain capable) |
| Number of Phases | — | 3 |
| Number of Channels (HS+LS) | — | 6 (3 high-side + 3 low-side) |
| Short-Circuit Protection | — | Desaturation detection (programmable threshold) |
| Dead-Time Adjustment | — | Programmable via SPI/external resistor |
| Nivel MSL | — | [DATA_NEEDED: MSL level] |
| AEC-Q100 Qualification | — | [DATA_NEEDED: AEC-Q100 grade] |