MC33937APEK vs MC33937APEK574 Comparaison
Comparaison détaillée côte à côte de MC33937APEK par NXP Semiconductors et MC33937APEK574 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MC33937APEK - 3-Phase FET Pre-Driver, 1.5A, 40V, SPI | NXP
MC33937APEK ✗ Fin de vieNXP Semiconductors
MC33937APEK574 - 3-Phase FET Pre-Driver, 1.5A Gate, 40V, SPI | NXP
MC33937APEK574 ✓ ActifComparaison des spécifications
| Paramètre | MC33937APEK | MC33937APEK574 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | Motor Drivers | Motor Drivers |
| Statut du cycle de vie | Fin de vie | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $3,78 | $3,13 |
| Product Type | 3-phase FET pre-driver (gate driver) | — |
| Nombre de sorties | 6 (3 high-side + 3 low-side) | — |
| Supply Voltage (Vdd) | 5 V typical logic supply | — |
| Battery / VPS Voltage Range | 6 V to 40 V (load-dump tolerant) | — |
| Gate Drive Current | greater than 1.5 A peak | — |
| Interface | SPI (Serial Peripheral Interface) | — |
| Integrated Protections | FET short-circuit / desaturation, over-current, undervoltage | — |
| Configuration de sortie | Three half-bridge gate drivers for external N-channel MOSFETs | — |
| Dead-Time Control | Programmable via SPI | — |
| Charge Pump | Integrated for high-side gate supply (VLS, VLS_CAP) | Integrated (100% duty-cycle capable) |
| Plage de température de fonctionnement | -40 C to +125 C | [DATA_NEEDED: operating temp range] |
| Boîtier | 54-pin SOIC-EP (exposed pad) | 54-SOIC-EP (exposed pad) |
| Type de montage | Surface Mount | Surface Mount |
| Technology | SMARTMOS mixed-signal | — |
| Statut RoHS | [DATA_NEEDED: RoHS compliance] | [DATA_NEEDED: RoHS status] |
| Automotive Qualification | AEC-Q100 qualified (per NXP product family page) | — |
| Fonction | — | 3-Phase FET Pre-Driver |
| Topology Driven | — | Three-phase N-channel MOSFET bridge (6 FETs) |
| Peak Gate Drive Current | — | >1.5 A (typ) |
| Supply Voltage (VCC / VDD) | — | 40 V max |
| Operating VDD | — | [DATA_NEEDED: VDD operating range] |
| Bootstrap Supply (VBS) | — | [DATA_NEEDED: VBS voltage range] |
| Gate Drive Voltage | — | [DATA_NEEDED: VGS drive voltage] |
| Communication Interface | — | SPI (daisy-chain capable) |
| Number of Phases | — | 3 |
| Number of Channels (HS+LS) | — | 6 (3 high-side + 3 low-side) |
| Short-Circuit Protection | — | Desaturation detection (programmable threshold) |
| Dead-Time Adjustment | — | Programmable via SPI/external resistor |
| Niveau MSL | — | [DATA_NEEDED: MSL level] |
| AEC-Q100 Qualification | — | [DATA_NEEDED: AEC-Q100 grade] |