MMA6262QR2 vs MMA6263QR2 Vergleich
Detaillierter Direktvergleich von MMA6262QR2 von NXP Semiconductors und MMA6263QR2 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MMA6262QR2 - ±1.5g X/Y Dual-Axis Accelerometer | NXP
MMA6262QR2 ⚠ Letzte BestellmöglichkeitNXP Semiconductors
MMA6263QR2 - ±1.5g Dual-Axis Analog Accelerometer | NXP / Freescale
MMA6263QR2 ⚠ Letzte BestellmöglichkeitSpezifikationsvergleich
| Parameter | MMA6262QR2 | MMA6263QR2 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | Motion Sensors | Motion Sensors |
| Lebenszyklusstatus | Letzte Kaufgelegenheit | Letzte Kaufgelegenheit |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $5,20 | $5,45 |
| Sensortyp | Accelerometer, Dual-Axis (X, Y) | Accelerometer, Dual Axis (X, Y) |
| Acceleration Range | ±1.5 g | ±1.5 g (g-select to ±6 g) |
| Sensitivity | 740 mV/g to 860 mV/g (at 3.3 V) | 740 mV/g to 860 mV/g (typ. 800 mV/g at 3.3 V) |
| Supply Voltage (VDD) | 3.15 V to 5.25 V (per MMA6801KW comp doc) | — |
| Ausgangstyp | Analog, Ratiometric | Analog, ratiometric voltage |
| Bandwidth (Low-Pass Filter) | 150 Hz (1-pole factory-set) | — |
| Zero-g Offset | Factory calibrated, no external trim required | — |
| Temperature Compensation | On-chip, factory-set | On-chip factory trimmed |
| Betriebstemperatur | -40 °C to +105 °C [DATA_NEEDED: confirm upper limit from full NXP datasheet] | — |
| Gehäuse / Bauform | 16-QFN-EP (6x6 mm) | — |
| Montageart | Surface Mount | Surface Mount |
| Supplier Device Package | 16-QFN-EP (6x6) | — |
| Lead Free Status | Contains Lead (per digchip snippet) | — |
| RoHS-Status | RoHS3 Compliant | RoHS Compliant |
| Sense Technology | Capacitive Micromachined (MEMS) | — |
| Versorgungsspannung | — | 3.3 V nominal (range per datasheet) |
| Bandwidth | — | 900 Hz sensor bandwidth |
| Low-Pass Filter | — | 1-pole on-chip, ~400 Hz cutoff |
| Zero-g Output (Typ) | — | 1.65 V (mid-supply) |
| Self-Test | — | Logic-level input on each axis |
| Gehäuse | — | 16-QFN-EP (6x6 mm) with exposed pad |
| Lead Status | — | Contains Lead (legacy package) |
| Operating Principle | — | Capacitive micromachined (MEMS) |