MMBF170LT1 vs 2N7002-7-F Vergleich
Detaillierter Direktvergleich von MMBF170LT1 von onsemi und 2N7002-7-F von Diodes Incorporated. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Diodes Incorporated
2N7002-7-F - 60V N-Ch Enhancement MOSFET SOT-23 | Diodes Incorporated
2N7002-7-F ✓ AktivSpezifikationsvergleich
| Parameter | MMBF170LT1 | 2N7002-7-F |
|---|---|---|
| Marke | onsemi | Diodes Incorporated |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,09 | $0,08 |
| Manufacturer | onsemi (ON Semiconductor) | — |
| Part Number | MMBF170LT1 | — |
| Transistortyp | N-Channel MOSFET, Enhancement Mode | N-Channel Enhancement-Mode MOSFET |
| Drain-Source Voltage (VDSS) | 60 V | — |
| Drain-Gate Voltage (VDGS) | 60 Vdc | — |
| Gate-Source Voltage - Continuous (VGS) | ±20 Vdc (per datasheet) | — |
| Gate-Source Voltage - Non-repetitive (VGSM) | ±40 Vpk (tp <= 50 ms) | — |
| Continuous Drain Current (ID) | 500 mA (Ta) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed value] | — |
| Total Device Dissipation (PD) | 225 mW (Ta, FR-5 board) | — |
| Betriebstemperaturbereich | -55 °C to +150 °C (TJ max per datasheet) | [DATA_NEEDED: Tj / TA operating range] |
| Gehäuse / Bauform | SOT-23-3 (TO-236) | — |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 3 | — |
| RoHS-Status | Compliant (per onsemi product page) | Compliant |
| AEC-Q101 Qualified | Yes (per datasheet) | — |
| Technology | DMOS | Trench MOSFET |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS max) | — | 60 V |
| Continuous Drain Current (ID) at Ta | — | 115 mA |
| Continuous Drain Current Range (per Mouser listing) | — | 105 mA to 210 mA |
| Power Dissipation (PD) at Ta | — | 370 mW |
| On-Resistance RDS(on) | — | 7.5 ohm to 13.5 ohm |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Gehäuse | — | SOT-23-3 (TO-236) |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge typical] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss typical] |
| Terminal Finish | — | Matte tin (solderable per MIL-STD-202, method 208) |
| Channel Mode | — | Enhancement |