MMBF170LT1 vs 2N7002-7-F 对比

详细并排对比 MMBF170LT1 出自 onsemi 和 2N7002-7-F 出自 Diodes Incorporated。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Diodes Incorporated
2N7002-7-F 2N7002-7-F - 60V N-Ch Enhancement MOSFET SOT-23 | Diodes Incorporated

2N7002-7-F - 60V N-Ch Enhancement MOSFET SOT-23 | Diodes Incorporated

2N7002-7-F ✓ 量产中

规格对比

参数 MMBF170LT1 2N7002-7-F
品牌 onsemi Diodes Incorporated
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.09 $0.08
Manufacturer onsemi (ON Semiconductor) —
Part Number MMBF170LT1 —
晶体管类型 N-Channel MOSFET, Enhancement Mode N-Channel Enhancement-Mode MOSFET
Drain-Source Voltage (VDSS) 60 V —
Drain-Gate Voltage (VDGS) 60 Vdc —
Gate-Source Voltage - Continuous (VGS) ±20 Vdc (per datasheet) —
Gate-Source Voltage - Non-repetitive (VGSM) ±40 Vpk (tp <= 50 ms) —
Continuous Drain Current (ID) 500 mA (Ta) —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulsed value] —
Total Device Dissipation (PD) 225 mW (Ta, FR-5 board) —
工作温度范围 -55 °C to +150 °C (TJ max per datasheet) [DATA_NEEDED: Tj / TA operating range]
封装 / 外壳 SOT-23-3 (TO-236) —
安装类型 Surface Mount Surface Mount
引脚数量 3 —
RoHS 状态 Compliant (per onsemi product page) Compliant
AEC-Q101 Qualified Yes (per datasheet) —
Technology DMOS Trench MOSFET
Polarity N-Channel —
Drain-Source Voltage (VDS max) — 60 V
Continuous Drain Current (ID) at Ta — 115 mA
Continuous Drain Current Range (per Mouser listing) — 105 mA to 210 mA
Power Dissipation (PD) at Ta — 370 mW
On-Resistance RDS(on) — 7.5 ohm to 13.5 ohm
Gate-Source Voltage (VGS) — +/-20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
封装 — SOT-23-3 (TO-236)
Gate Charge (Qg) — [DATA_NEEDED: total gate charge typical]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss typical]
Terminal Finish — Matte tin (solderable per MIL-STD-202, method 208)
Channel Mode — Enhancement

数据手册与资源

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