MMBF170LT1 vs 2N7002-7-F Comparaison
Comparaison détaillée côte à côte de MMBF170LT1 par onsemi et 2N7002-7-F par Diodes Incorporated. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Diodes Incorporated
2N7002-7-F - 60V N-Ch Enhancement MOSFET SOT-23 | Diodes Incorporated
2N7002-7-F ✓ ActifComparaison des spécifications
| Paramètre | MMBF170LT1 | 2N7002-7-F |
|---|---|---|
| Marque | onsemi | Diodes Incorporated |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,09 | $0,08 |
| Manufacturer | onsemi (ON Semiconductor) | — |
| Part Number | MMBF170LT1 | — |
| Type de transistor | N-Channel MOSFET, Enhancement Mode | N-Channel Enhancement-Mode MOSFET |
| Drain-Source Voltage (VDSS) | 60 V | — |
| Drain-Gate Voltage (VDGS) | 60 Vdc | — |
| Gate-Source Voltage - Continuous (VGS) | ±20 Vdc (per datasheet) | — |
| Gate-Source Voltage - Non-repetitive (VGSM) | ±40 Vpk (tp <= 50 ms) | — |
| Continuous Drain Current (ID) | 500 mA (Ta) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed value] | — |
| Total Device Dissipation (PD) | 225 mW (Ta, FR-5 board) | — |
| Plage de température de fonctionnement | -55 °C to +150 °C (TJ max per datasheet) | [DATA_NEEDED: Tj / TA operating range] |
| Boîtier / Format | SOT-23-3 (TO-236) | — |
| Type de montage | Surface Mount | Surface Mount |
| Nombre de broches | 3 | — |
| Statut RoHS | Compliant (per onsemi product page) | Compliant |
| AEC-Q101 Qualified | Yes (per datasheet) | — |
| Technology | DMOS | Trench MOSFET |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS max) | — | 60 V |
| Continuous Drain Current (ID) at Ta | — | 115 mA |
| Continuous Drain Current Range (per Mouser listing) | — | 105 mA to 210 mA |
| Power Dissipation (PD) at Ta | — | 370 mW |
| On-Resistance RDS(on) | — | 7.5 ohm to 13.5 ohm |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Boîtier | — | SOT-23-3 (TO-236) |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge typical] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss typical] |
| Terminal Finish | — | Matte tin (solderable per MIL-STD-202, method 208) |
| Channel Mode | — | Enhancement |