MP3H6115A6T1 vs MP3H6115A6U Vergleich

Detaillierter Direktvergleich von MP3H6115A6T1 von NXP Semiconductors und MP3H6115A6U von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MP3H6115A6T1 MP3H6115A6T1 - 15-115 kPa Absolute Pressure Sensor | NXP

MP3H6115A6T1 - 15-115 kPa Absolute Pressure Sensor | NXP

MP3H6115A6T1 ✓ Aktiv
NXP Semiconductors
MP3H6115A6U MP3H6115A6U - 15-115 kPa Absolute Pressure Sensor | NXP

MP3H6115A6U - 15-115 kPa Absolute Pressure Sensor | NXP

MP3H6115A6U ✓ Aktiv

Spezifikationsvergleich

Parameter MP3H6115A6T1 MP3H6115A6U
Marke NXP Semiconductors NXP Semiconductors
Kategorie Pressure Sensors Pressure Sensors
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $4,10 $4,85
Pressure Type Absolute —
Operating Pressure Range 15 kPa to 115 kPa (2.18 PSI to 16.68 PSI) —
Ausgangstyp Analog voltage, ratiometric Analog, ratiometric
Ausgangsspannungsbereich 0.12 V to 2.8 V (at Vdd = 3.0 V) 0.12 V to 2.8 V
Versorgungsspannung 3.0 V typical 3 V
Versorgungsstrom [DATA_NEEDED: supply current typical mA] —
Betriebstemperaturbereich -40 C to +125 C —
Compensated Temperature Range -40 C to +125 C —
Pressure Port Male - 0.13 inch (3.3 mm) tube Male - 0.13 inch (3.3 mm) tube
Gehäuse 8-SOIC (0.295 inch, 7.50 mm width) 8-SOIC (SOP-8), 0.295 inch / 7.50 mm body width
Montageart Surface Mount Surface Mount
Sensor Technology MEMS piezo-resistive with on-chip bipolar op-amp —
On-Chip Signal Conditioning Yes (amplifier + temperature compensation + thin-film resistor network) —
Output Type Detail Ratiometric to Vdd —
RoHS-Status [DATA_NEEDED: RoHS status] Compliant
Sensortyp — Absolute pressure sensor
Pressure Range — 15 kPa to 115 kPa (2.18 PSI to 16.68 PSI)
Operating Pressure — 15 kPa ~ 115 kPa
Accuracy — High accuracy at high temperature (per datasheet)
Temperature Compensation — -40 C to +125 C
Technology — Piezoresistive (MEMS) with bipolar signal conditioning
Signal Conditioning — On-chip bipolar op-amp and thin-film resistor network
Output Ratiometric — Yes (output proportional to VDD)
Betriebstemperatur — -40 C to +125 C
Package Material — Durable thermoplastic (PPS) surface-mount package

Datenblätter & Ressourcen

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