MPX10DP vs MPX10D Vergleich

Detaillierter Direktvergleich von MPX10DP von STMicroelectronics und MPX10D von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter MPX10DP MPX10D
Marke STMicroelectronics NXP Semiconductors
Kategorie Pressure Sensors Pressure Sensors
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $6,09 $5,20
Pressure Type Differential Differential
Operating Pressure Range 0 kPa to 10 kPa (0 to 1.45 PSI) 0 to 10 kPa (0 to 1.45 psi)
Maximum Overload Pressure [DATA_NEEDED: maximum overload pressure] —
Ausgangstyp Analog Wheatstone bridge (uncompensated) Analog differential voltage (Wheatstone bridge)
Output Voltage Span 0 mV to 35 mV at 3 V excitation —
Supply Voltage (Excitation) 3 V DC typical —
Port Configuration Dual male 0.19 in (4.93 mm) tube, axial Single side port, differential measurement
Gehäuse / Bauform 4-SIP Module —
Montageart Through-Hole Through-Hole (single port on top)
Betriebstemperatur [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Bridge Impedance [DATA_NEEDED: input/output bridge resistance] —
Linearity [DATA_NEEDED: linearity %FS] [DATA_NEEDED: typical linearity %FS]
Temperature Compensation None (uncompensated) —
RoHS-Status [DATA_NEEDED: RoHS status] Compliant
Media Compatibility Dry gases (non-corrosive) —
Full-Scale Span — 35 mV typical at 3 V supply
Versorgungsspannung — 3 V typical
Sensitivity — approximately 3.5 mV / kPa
Offset — [DATA_NEEDED: typical offset value]
Gehäuse — 4-SIP Module (case 344-15)
Technology — Silicon piezoresistive (MEMS strain gauge)
Compensation — Uncompensated (external conditioning required)

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