MPX10DP vs MPX10D Comparación
Comparación detallada lado a lado de MPX10DP por STMicroelectronics y MPX10D por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
STMicroelectronics
MPX10DP - 10kPa Differential Pressure Sensor 35mV | STMicroelectronics
MPX10DP ✓ ActivoNXP Semiconductors
MPX10D - 10 kPa Uncompensated Pressure Sensor | NXP / STMicroelectronics
MPX10D ✓ ActivoComparación de especificaciones
| Parámetro | MPX10DP | MPX10D |
|---|---|---|
| Marca | STMicroelectronics | NXP Semiconductors |
| Categoría | Pressure Sensors | Pressure Sensors |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $6,09 | $5,20 |
| Pressure Type | Differential | Differential |
| Operating Pressure Range | 0 kPa to 10 kPa (0 to 1.45 PSI) | 0 to 10 kPa (0 to 1.45 psi) |
| Maximum Overload Pressure | [DATA_NEEDED: maximum overload pressure] | — |
| Tipo de salida | Analog Wheatstone bridge (uncompensated) | Analog differential voltage (Wheatstone bridge) |
| Output Voltage Span | 0 mV to 35 mV at 3 V excitation | — |
| Supply Voltage (Excitation) | 3 V DC typical | — |
| Port Configuration | Dual male 0.19 in (4.93 mm) tube, axial | Single side port, differential measurement |
| Encapsulado / Carcasa | 4-SIP Module | — |
| Tipo de montaje | Through-Hole | Through-Hole (single port on top) |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Bridge Impedance | [DATA_NEEDED: input/output bridge resistance] | — |
| Linearity | [DATA_NEEDED: linearity %FS] | [DATA_NEEDED: typical linearity %FS] |
| Temperature Compensation | None (uncompensated) | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Media Compatibility | Dry gases (non-corrosive) | — |
| Full-Scale Span | — | 35 mV typical at 3 V supply |
| Tensión de alimentación | — | 3 V typical |
| Sensitivity | — | approximately 3.5 mV / kPa |
| Offset | — | [DATA_NEEDED: typical offset value] |
| Encapsulado | — | 4-SIP Module (case 344-15) |
| Technology | — | Silicon piezoresistive (MEMS strain gauge) |
| Compensation | — | Uncompensated (external conditioning required) |