MPX10DP vs MPX10D Comparaison
Comparaison détaillée côte à côte de MPX10DP par STMicroelectronics et MPX10D par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
STMicroelectronics
MPX10DP - 10kPa Differential Pressure Sensor 35mV | STMicroelectronics
MPX10DP ✓ ActifNXP Semiconductors
MPX10D - 10 kPa Uncompensated Pressure Sensor | NXP / STMicroelectronics
MPX10D ✓ ActifComparaison des spécifications
| Paramètre | MPX10DP | MPX10D |
|---|---|---|
| Marque | STMicroelectronics | NXP Semiconductors |
| Catégorie | Pressure Sensors | Pressure Sensors |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $6,09 | $5,20 |
| Pressure Type | Differential | Differential |
| Operating Pressure Range | 0 kPa to 10 kPa (0 to 1.45 PSI) | 0 to 10 kPa (0 to 1.45 psi) |
| Maximum Overload Pressure | [DATA_NEEDED: maximum overload pressure] | — |
| Type de sortie | Analog Wheatstone bridge (uncompensated) | Analog differential voltage (Wheatstone bridge) |
| Output Voltage Span | 0 mV to 35 mV at 3 V excitation | — |
| Supply Voltage (Excitation) | 3 V DC typical | — |
| Port Configuration | Dual male 0.19 in (4.93 mm) tube, axial | Single side port, differential measurement |
| Boîtier / Format | 4-SIP Module | — |
| Type de montage | Through-Hole | Through-Hole (single port on top) |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Bridge Impedance | [DATA_NEEDED: input/output bridge resistance] | — |
| Linearity | [DATA_NEEDED: linearity %FS] | [DATA_NEEDED: typical linearity %FS] |
| Temperature Compensation | None (uncompensated) | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Media Compatibility | Dry gases (non-corrosive) | — |
| Full-Scale Span | — | 35 mV typical at 3 V supply |
| Tension d'alimentation | — | 3 V typical |
| Sensitivity | — | approximately 3.5 mV / kPa |
| Offset | — | [DATA_NEEDED: typical offset value] |
| Boîtier | — | 4-SIP Module (case 344-15) |
| Technology | — | Silicon piezoresistive (MEMS strain gauge) |
| Compensation | — | Uncompensated (external conditioning required) |