MPX12GP vs MPX2050GP Vergleich

Detaillierter Direktvergleich von MPX12GP von NXP Semiconductors und MPX2050GP von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter MPX12GP MPX2050GP
Marke NXP Semiconductors NXP Semiconductors
Kategorie Pressure Sensors Pressure Sensors
Lebenszyklusstatus Obsolete Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $10,50 $9,85
Pressure Type Vented Gauge Vented Gauge
Maximum Pressure 1.45 PSI (10 kPa) —
Operating Pressure Range 0 kPa to 10 kPa 0 kPa to 50 kPa (0 PSI to 7.25 PSI)
Ausgangstyp Analog Voltage (Wheatstone bridge, uncompensated) Analog Wheatstone Bridge (mV)
Output Span @ 3 V 0 mV to 55 mV —
Supply Voltage (typical) 3 V DC —
Excitation Type Constant voltage or constant current —
Port Style Male 0.19" (4.93 mm) axial tube Male 0.19" (4.93 mm) Tube
Anzahl der Pins 4 —
Gehäuse / Bauform 4-SIP Module (Case 344B-01) 4-SIP Module (Case 344B-01)
Betriebstemperatur -40 °C to +125 °C 0C to +85C
Montageart Through Hole Through-Hole (SIP, vertical)
Linearity ±0.5 % (typical) +/-0.05% to +/-0.1% of FSS (typ)
Compensation Uncompensated (external compensation required) On-chip temperature compensated and laser-trimmed
RoHS-Status [DATA_NEEDED: RoHS status] —
Maximum Overload Pressure — [DATA_NEEDED: maximum overload pressure]
Full-Scale Output (Typ @ 10 V) — 40 mV (4 mV/V)
Zero Offset (Typ) — 0 mV
Supply / Excitation Voltage — 10 V typical (max 16 V per datasheet)
Pressure Hysteresis — < 0.1% of FSS
Storage Temperature — [DATA_NEEDED: storage temperature range]
Response Time — [DATA_NEEDED: response time / bandwidth]
Technology — Silicon Piezoresistive, MEMS
Diaphragm Material — Monolithic silicon with integrated strain gauge
Lead-Free / RoHS — Yes (RoHS compliant)

Datenblätter & Ressourcen

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