MPX12GP vs MPX2050GP Comparação

Comparação detalhada lado a lado de MPX12GP por NXP Semiconductors e MPX2050GP por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Comparação de especificações

Parâmetro MPX12GP MPX2050GP
Marca NXP Semiconductors NXP Semiconductors
Categoria Pressure Sensors Pressure Sensors
Status do ciclo de vida Obsolete Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $10,50 $9,85
Pressure Type Vented Gauge Vented Gauge
Maximum Pressure 1.45 PSI (10 kPa) —
Operating Pressure Range 0 kPa to 10 kPa 0 kPa to 50 kPa (0 PSI to 7.25 PSI)
Tipo de saída Analog Voltage (Wheatstone bridge, uncompensated) Analog Wheatstone Bridge (mV)
Output Span @ 3 V 0 mV to 55 mV —
Supply Voltage (typical) 3 V DC —
Excitation Type Constant voltage or constant current —
Port Style Male 0.19" (4.93 mm) axial tube Male 0.19" (4.93 mm) Tube
Número de pinos 4 —
Encapsulamento / Caixa 4-SIP Module (Case 344B-01) 4-SIP Module (Case 344B-01)
Temperatura de operação -40 °C to +125 °C 0C to +85C
Tipo de montagem Through Hole Through-Hole (SIP, vertical)
Linearity ±0.5 % (typical) +/-0.05% to +/-0.1% of FSS (typ)
Compensation Uncompensated (external compensation required) On-chip temperature compensated and laser-trimmed
Status RoHS [DATA_NEEDED: RoHS status] —
Maximum Overload Pressure — [DATA_NEEDED: maximum overload pressure]
Full-Scale Output (Typ @ 10 V) — 40 mV (4 mV/V)
Zero Offset (Typ) — 0 mV
Supply / Excitation Voltage — 10 V typical (max 16 V per datasheet)
Pressure Hysteresis — < 0.1% of FSS
Storage Temperature — [DATA_NEEDED: storage temperature range]
Response Time — [DATA_NEEDED: response time / bandwidth]
Technology — Silicon Piezoresistive, MEMS
Diaphragm Material — Monolithic silicon with integrated strain gauge
Lead-Free / RoHS — Yes (RoHS compliant)

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