MPX12GP vs MPX2050GP Comparaison
Comparaison détaillée côte à côte de MPX12GP par NXP Semiconductors et MPX2050GP par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MPX2050GP - 50 kPa Vented Gauge Pressure Sensor | NXP / STMicro
MPX2050GP ✓ ActifComparaison des spécifications
| Paramètre | MPX12GP | MPX2050GP |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | Pressure Sensors | Pressure Sensors |
| Statut du cycle de vie | Obsolete | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $10,50 | $9,85 |
| Pressure Type | Vented Gauge | Vented Gauge |
| Maximum Pressure | 1.45 PSI (10 kPa) | — |
| Operating Pressure Range | 0 kPa to 10 kPa | 0 kPa to 50 kPa (0 PSI to 7.25 PSI) |
| Type de sortie | Analog Voltage (Wheatstone bridge, uncompensated) | Analog Wheatstone Bridge (mV) |
| Output Span @ 3 V | 0 mV to 55 mV | — |
| Supply Voltage (typical) | 3 V DC | — |
| Excitation Type | Constant voltage or constant current | — |
| Port Style | Male 0.19" (4.93 mm) axial tube | Male 0.19" (4.93 mm) Tube |
| Nombre de broches | 4 | — |
| Boîtier / Format | 4-SIP Module (Case 344B-01) | 4-SIP Module (Case 344B-01) |
| Température de fonctionnement | -40 °C to +125 °C | 0C to +85C |
| Type de montage | Through Hole | Through-Hole (SIP, vertical) |
| Linearity | ±0.5 % (typical) | +/-0.05% to +/-0.1% of FSS (typ) |
| Compensation | Uncompensated (external compensation required) | On-chip temperature compensated and laser-trimmed |
| Statut RoHS | [DATA_NEEDED: RoHS status] | — |
| Maximum Overload Pressure | — | [DATA_NEEDED: maximum overload pressure] |
| Full-Scale Output (Typ @ 10 V) | — | 40 mV (4 mV/V) |
| Zero Offset (Typ) | — | 0 mV |
| Supply / Excitation Voltage | — | 10 V typical (max 16 V per datasheet) |
| Pressure Hysteresis | — | < 0.1% of FSS |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Response Time | — | [DATA_NEEDED: response time / bandwidth] |
| Technology | — | Silicon Piezoresistive, MEMS |
| Diaphragm Material | — | Monolithic silicon with integrated strain gauge |
| Lead-Free / RoHS | — | Yes (RoHS compliant) |