MPX2053DP vs MPX2010DP Vergleich

Detaillierter Direktvergleich von MPX2053DP von NXP Semiconductors und MPX2010DP von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MPX2010DP MPX2010DP - 10 kPa Differential Pressure Sensor | NXP/STMicro

MPX2010DP - 10 kPa Differential Pressure Sensor | NXP/STMicro

MPX2010DP ✓ Aktiv

Spezifikationsvergleich

Parameter MPX2053DP MPX2010DP
Marke NXP Semiconductors NXP Semiconductors
Kategorie Pressure Sensors Pressure Sensors
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $12,95 $8,50
Pressure Type Differential —
Operating Pressure Range 0 kPa to 50 kPa (0 PSI to 7.25 PSI) —
Sensitivity 0.8 mV/kPa (typical) —
Full-Scale Span (10 V supply) 0 mV to 40 mV —
Ausgangstyp Analog voltage, ratiometric Analog voltage, Wheatstone bridge (mV level)
Versorgungsspannung 10 V typical, 16 V maximum 10 V DC typical (max 16 V)
Maximum Offset ±1.0 mV —
Response Time 1.0 ms (typical) 1.0 ms (typical)
Betriebstemperatur 0 °C to +85 °C -40 °C to +125 °C
Port Configuration Dual barbed ports, 0.19 in (4.93 mm) tube Dual ports (differential), 0.19 inch / 4.93 mm tubes
Gehäuse / Bauform 4-SIP Module (Case 344-15) —
Montageart Through-hole, PCB mount —
Technology Silicon piezoresistive MEMS, on-chip temperature compensated Piezoresistive (silicon strain gauge bridge)
RoHS-Status Compliant Compliant
Lead-Free Yes —
Sensortyp — Differential Pressure Sensor
Pressure Range — 0 to 10 kPa (0 to 1.45 PSI)
Typical Full-Scale Span — 25 mV at 10 V excitation
Zero Pressure Offset — 0 mV nominally (±1.0 mV max)
Linearity — ±0.05% (typ)
Temperature Compensation — 0 °C to +85 °C (on-chip)
Maximum Overpressure — 75 kPa
Burst Pressure — 200 kPa
Package / Mounting — 4-SIP Module (through-hole with axial tubes)
Media Compatibility — Dry air or non-corrosive gas

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