MPX2100DP vs MPX2010DP Vergleich

Detaillierter Direktvergleich von MPX2100DP von NXP Semiconductors und MPX2010DP von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MPX2100DP MPX2100DP - 100kPa Differential Pressure Sensor, 40mV | NXP

MPX2100DP - 100kPa Differential Pressure Sensor, 40mV | NXP

MPX2100DP ✓ Aktiv
NXP Semiconductors
MPX2010DP MPX2010DP - 10 kPa Differential Pressure Sensor | NXP/STMicro

MPX2010DP - 10 kPa Differential Pressure Sensor | NXP/STMicro

MPX2010DP ✓ Aktiv

Spezifikationsvergleich

Parameter MPX2100DP MPX2010DP
Marke NXP Semiconductors NXP Semiconductors
Kategorie Pressure Sensors Pressure Sensors
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $5,95 $8,50
Pressure Type Differential —
Operating Pressure Range 0 kPa to 100 kPa (0 to 14.5 psi) —
Maximum Overload Pressure [DATA_NEEDED: maximum overload pressure] —
Full-Scale Span (Typical) 40 mV (at 10 V excitation) —
Zero Pressure Offset [DATA_NEEDED: zero pressure offset] 0 mV nominally (±1.0 mV max)
Linearity 1% typical ±0.05% (typ)
Versorgungsspannung 10 V DC typical 10 V DC typical (max 16 V)
Versorgungsstrom [DATA_NEEDED: supply current] —
Ausgangstyp Analog mV (Wheatstone Bridge) Analog voltage, Wheatstone bridge (mV level)
Betriebstemperatur 0C to +85C (compensated) -40 °C to +125 °C
Storage Temperature [DATA_NEEDED: storage temperature] —
Port Configuration Dual port, axial tube, 4.93 mm (0.19 in) Dual ports (differential), 0.19 inch / 4.93 mm tubes
Gehäuse / Bauform 4-SIP Module (Case 344C-01) —
Montageart Through-Hole —
Technology Silicon piezoresistive, on-chip temperature compensation Piezoresistive (silicon strain gauge bridge)
RoHS-Status Compliant Compliant
MSL-Level [DATA_NEEDED: MSL rating] —
Sensortyp — Differential Pressure Sensor
Pressure Range — 0 to 10 kPa (0 to 1.45 PSI)
Typical Full-Scale Span — 25 mV at 10 V excitation
Temperature Compensation — 0 °C to +85 °C (on-chip)
Response Time — 1.0 ms (typical)
Maximum Overpressure — 75 kPa
Burst Pressure — 200 kPa
Package / Mounting — 4-SIP Module (through-hole with axial tubes)
Media Compatibility — Dry air or non-corrosive gas

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern