MPX2200DP vs MPX2100D Vergleich
Detaillierter Direktvergleich von MPX2200DP von NXP Semiconductors und MPX2100D von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | MPX2200DP | MPX2100D |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | Pressure Sensors | Pressure Sensors |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $10,52 | $17,80 |
| Manufacturer | NXP Semiconductors (formerly Motorola) | — |
| Series | MPX2200 | — |
| Sensortyp | Differential Pressure Sensor (Piezoresistive) | — |
| Operating Pressure Range | 0 kPa to 200 kPa (0 PSI to 29.01 PSI) | 0 kPa to 100 kPa (0 to 14.5 psi) |
| Maximum Overload Pressure | [DATA_NEEDED: maximum overload pressure] | — |
| Ausgangstyp | Analog Wheatstone Bridge (ratiometric) | Analog ratiometric Wheatstone bridge (millivolts) |
| Output Span | 0 mV to 40 mV at 10 V excitation | — |
| Sensitivity (nominal) | 0.2 mV/kPa | — |
| Pressure Port | Dual Male Tube, 0.19 in (4.93 mm) | — |
| Port Configuration | DP - Dual Port (differential) | — |
| Supply Voltage (recommended) | 10 V DC | — |
| Supply Voltage (max input) | 16 V DC | — |
| Betriebstemperatur | -40C to +125C | — |
| Gehäuse / Bauform | 4-SIP Module (Through-Hole) | — |
| Montageart | Through Hole | Through-hole SIP module |
| RoHS-Status | Compliant | Compliant [DATA_NEEDED: confirm from NXP product page] |
| Minimum Order Quantity | 100 (tray pack) | — |
| Min. Package Quantity | 20 (tray) | — |
| Pressure Type | — | Differential |
| Full-Scale Span (Typical) | — | 40 mV at 10 V excitation |
| Sensitivity (Nominal) | — | 0.4 mV/kPa |
| Supply Voltage (Recommended) | — | 10 V DC |
| Supply Voltage (Maximum) | — | 16 V DC |
| Pressure Port Configuration | — | Dual axial ports (differential) |
| Gehäuse | — | 4-SIP Unibody (UNIBODY4F), 2.54 mm pitch |
| Package Body Dimensions | — | 15.56 mm x 15.56 mm x 5.33 mm |
| Betriebstemperaturbereich | — | -40C to +125C [DATA_NEEDED: confirm exact range from datasheet] |
| On-Chip Temperature Compensation | — | Yes (factory laser-trimmed) |
| Technology | — | Silicon piezoresistive MEMS strain-gauge bridge |
| Diaphragm Material | — | Silicon [DATA_NEEDED: confirm] |
| Linearity | — | 0.1% to 0.3% typical [DATA_NEEDED: confirm] |