MPX2200DP vs MPX2100D 对比

详细并排对比 MPX2200DP 出自 NXP Semiconductors 和 MPX2100D 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

NXP Semiconductors
MPX2200DP MPX2200DP - 200 kPa Differential Pressure Sensor, 4-SIP Module

MPX2200DP - 200 kPa Differential Pressure Sensor, 4-SIP Module

MPX2200DP ✓ 量产中
NXP Semiconductors
MPX2100D MPX2100D - 100kPa Differential Pressure Sensor | NXP/STMicro

MPX2100D - 100kPa Differential Pressure Sensor | NXP/STMicro

MPX2100D ✓ 量产中

规格对比

参数 MPX2200DP MPX2100D
品牌 NXP Semiconductors NXP Semiconductors
分类 Pressure Sensors Pressure Sensors
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $10.52 $17.80
Manufacturer NXP Semiconductors (formerly Motorola) —
Series MPX2200 —
传感器类型 Differential Pressure Sensor (Piezoresistive) —
Operating Pressure Range 0 kPa to 200 kPa (0 PSI to 29.01 PSI) 0 kPa to 100 kPa (0 to 14.5 psi)
Maximum Overload Pressure [DATA_NEEDED: maximum overload pressure] —
输出类型 Analog Wheatstone Bridge (ratiometric) Analog ratiometric Wheatstone bridge (millivolts)
Output Span 0 mV to 40 mV at 10 V excitation —
Sensitivity (nominal) 0.2 mV/kPa —
Pressure Port Dual Male Tube, 0.19 in (4.93 mm) —
Port Configuration DP - Dual Port (differential) —
Supply Voltage (recommended) 10 V DC —
Supply Voltage (max input) 16 V DC —
工作温度 -40C to +125C —
封装 / 外壳 4-SIP Module (Through-Hole) —
安装类型 Through Hole Through-hole SIP module
RoHS 状态 Compliant Compliant [DATA_NEEDED: confirm from NXP product page]
Minimum Order Quantity 100 (tray pack) —
Min. Package Quantity 20 (tray) —
Pressure Type — Differential
Full-Scale Span (Typical) — 40 mV at 10 V excitation
Sensitivity (Nominal) — 0.4 mV/kPa
Supply Voltage (Recommended) — 10 V DC
Supply Voltage (Maximum) — 16 V DC
Pressure Port Configuration — Dual axial ports (differential)
封装 — 4-SIP Unibody (UNIBODY4F), 2.54 mm pitch
Package Body Dimensions — 15.56 mm x 15.56 mm x 5.33 mm
工作温度范围 — -40C to +125C [DATA_NEEDED: confirm exact range from datasheet]
On-Chip Temperature Compensation — Yes (factory laser-trimmed)
Technology — Silicon piezoresistive MEMS strain-gauge bridge
Diaphragm Material — Silicon [DATA_NEEDED: confirm]
Linearity — 0.1% to 0.3% typical [DATA_NEEDED: confirm]

数据手册与资源

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