MPX2202GP vs MPX2102GP Vergleich
Detaillierter Direktvergleich von MPX2202GP von NXP Semiconductors und MPX2102GP von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | MPX2202GP | MPX2102GP |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | Pressure Sensors | Pressure Sensors |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $24,80 | $5,40 |
| Pressure Type | Vented Gauge | Vented Gauge |
| Operating Pressure Range | 0 kPa to 200 kPa (0 to 29.01 PSI) | 0 kPa to 100 kPa (0 PSI to 14.5 PSI) |
| Maximum Overload Pressure | [DATA_NEEDED: maximum overload pressure] | — |
| Ausgangsspannung | 0 mV to 40 mV (at 10 V excitation) | — |
| Versorgungsspannung | 10 V DC nominal | — |
| Versorgungsstrom | [DATA_NEEDED: supply current] | — |
| Betriebstemperatur | -40 C to +125 C [DATA_NEEDED: confirm from datasheet curves] | 0 C to +85 C |
| Port Size | Male, 0.19 in (4.93 mm) Tube | — |
| Gehäuse / Bauform | 4-SIP Top Port Module | — |
| Termination Style | Through-Hole (PCB) | — |
| Accuracy | [DATA_NEEDED: linearity / accuracy specification] | — |
| Media Compatibility | Dry air or non-corrosive gases (per datasheet) | — |
| Compensation | On-chip temperature compensated and calibrated | — |
| Montageart | Through Hole | Through-Hole SIP |
| RoHS-Status | [DATA_NEEDED: RoHS compliance] | Compliant |
| Maximum Overpressure | — | [DATA_NEEDED: maximum overpressure rating] |
| Full-Scale Output (VoutFS) | — | 40 mV at 10 V excitation |
| Ausgangsspannungsbereich | — | 0 mV to 40 mV |
| Excitation Voltage | — | 10 V typical (DC) |
| Sensitivity | — | 0.4 mV/kPa nominal |
| Linearity | — | 1.0 % maximum |
| Pressure Port | — | Male 0.19 in (4.93 mm) tube |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Temperature Compensation Range | — | 0 C to +85 C (on-chip) |
| Gehäuse | — | 4-SIP Module (Unibody GP) |
| Sensor Technology | — | Silicon piezoresistive, monolithic diaphragm |
| Offset (null) | — | 0 mV to 1 mV typical |