MPX2202GP vs MPX2102GP Сравнение
Подробное сравнение бок о бок MPX2202GP от NXP Semiconductors и MPX2102GP от NXP Semiconductors. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | MPX2202GP | MPX2102GP |
|---|---|---|
| Бренд | NXP Semiconductors | NXP Semiconductors |
| Категория | Pressure Sensors | Pressure Sensors |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $24,80 | $5,40 |
| Pressure Type | Vented Gauge | Vented Gauge |
| Operating Pressure Range | 0 kPa to 200 kPa (0 to 29.01 PSI) | 0 kPa to 100 kPa (0 PSI to 14.5 PSI) |
| Maximum Overload Pressure | [DATA_NEEDED: maximum overload pressure] | — |
| Выходное напряжение | 0 mV to 40 mV (at 10 V excitation) | — |
| Напряжение питания | 10 V DC nominal | — |
| Ток потребления | [DATA_NEEDED: supply current] | — |
| Рабочая температура | -40 C to +125 C [DATA_NEEDED: confirm from datasheet curves] | 0 C to +85 C |
| Port Size | Male, 0.19 in (4.93 mm) Tube | — |
| Корпус / Типоразмер | 4-SIP Top Port Module | — |
| Termination Style | Through-Hole (PCB) | — |
| Accuracy | [DATA_NEEDED: linearity / accuracy specification] | — |
| Media Compatibility | Dry air or non-corrosive gases (per datasheet) | — |
| Compensation | On-chip temperature compensated and calibrated | — |
| Тип монтажа | Through Hole | Through-Hole SIP |
| Статус RoHS | [DATA_NEEDED: RoHS compliance] | Compliant |
| Maximum Overpressure | — | [DATA_NEEDED: maximum overpressure rating] |
| Full-Scale Output (VoutFS) | — | 40 mV at 10 V excitation |
| Диапазон выходного напряжения | — | 0 mV to 40 mV |
| Excitation Voltage | — | 10 V typical (DC) |
| Sensitivity | — | 0.4 mV/kPa nominal |
| Linearity | — | 1.0 % maximum |
| Pressure Port | — | Male 0.19 in (4.93 mm) tube |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Temperature Compensation Range | — | 0 C to +85 C (on-chip) |
| Корпус | — | 4-SIP Module (Unibody GP) |
| Sensor Technology | — | Silicon piezoresistive, monolithic diaphragm |
| Offset (null) | — | 0 mV to 1 mV typical |