MPX2202GP vs MPX2102GP Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MPX2202GP disebabkan oleh NXP Semiconductors dan MPX2102GP disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | MPX2202GP | MPX2102GP |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | Pressure Sensors | Pressure Sensors |
| Status Lingkungan Hidup | Aktif | Aktif |
| Pressure Type | Vented Gauge | Vented Gauge |
| Operating Pressure Range | 0 kPa to 200 kPa (0 to 29.01 PSI) | 0 kPa to 100 kPa (0 PSI to 14.5 PSI) |
| Maximum Overload Pressure | [DATA_NEEDED: maximum overload pressure] | — |
| Tegangan Output | 0 mV to 40 mV (at 10 V excitation) | — |
| Tegangan Pemberi Arus | 10 V DC nominal | — |
| Arus Pemberi Arus | [DATA_NEEDED: supply current] | — |
| Suhu Operasi | -40 C to +125 C [DATA_NEEDED: confirm from datasheet curves] | 0 C to +85 C |
| Port Size | Male, 0.19 in (4.93 mm) Tube | — |
| Kemasan / Case | 4-SIP Top Port Module | — |
| Termination Style | Through-Hole (PCB) | — |
| Accuracy | [DATA_NEEDED: linearity / accuracy specification] | — |
| Media Compatibility | Dry air or non-corrosive gases (per datasheet) | — |
| Compensation | On-chip temperature compensated and calibrated | — |
| Jenis Pemasangan | Through Hole | Through-Hole SIP |
| Status RoHS | [DATA_NEEDED: RoHS compliance] | Compliant |
| Maximum Overpressure | — | [DATA_NEEDED: maximum overpressure rating] |
| Full-Scale Output (VoutFS) | — | 40 mV at 10 V excitation |
| Gambaran Tegangan Output | — | 0 mV to 40 mV |
| Excitation Voltage | — | 10 V typical (DC) |
| Sensitivity | — | 0.4 mV/kPa nominal |
| Linearity | — | 1.0 % maximum |
| Pressure Port | — | Male 0.19 in (4.93 mm) tube |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Temperature Compensation Range | — | 0 C to +85 C (on-chip) |
| Kemasan | — | 4-SIP Module (Unibody GP) |
| Sensor Technology | — | Silicon piezoresistive, monolithic diaphragm |
| Offset (null) | — | 0 mV to 1 mV typical |