MPX4100A vs MPX2100D Vergleich
Detaillierter Direktvergleich von MPX4100A von NXP Semiconductors und MPX2100D von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | MPX4100A | MPX2100D |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | Pressure Sensors | Pressure Sensors |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $10,85 | $17,80 |
| Pressure Type | Absolute | Differential |
| Operating Pressure Range | 20 kPa to 105 kPa (2.9 PSI to 15.23 PSI) | 0 kPa to 100 kPa (0 to 14.5 psi) |
| Ausgangstyp | Analog Voltage | Analog ratiometric Wheatstone bridge (millivolts) |
| Ausgangsspannungsbereich | 0.3 V to 4.9 V | — |
| Supply Voltage Range | 4.85 V to 5.35 V | — |
| Sensitivity | 54 mV/kPa (typical) | — |
| Full-Scale Output (Nominal) | 4.9 V at 105 kPa | — |
| Accuracy | ±1.8% | — |
| Versorgungsstrom | [DATA_NEEDED: typical supply current in mA] | — |
| Betriebstemperaturbereich | -40C to +125C | -40C to +125C [DATA_NEEDED: confirm exact range from datasheet] |
| Port Type | Single axial port (no hose barb on basic element) | — |
| Gehäuse / Bauform | 6-SIP Module (through-hole) | — |
| Montageart | Through Hole | Through-hole SIP module |
| Output Response Time | [DATA_NEEDED: response time in ms] | — |
| RoHS-Status | Compliant | Compliant [DATA_NEEDED: confirm from NXP product page] |
| Output Ratiometric to Vcc | Yes | — |
| Full-Scale Span (Typical) | — | 40 mV at 10 V excitation |
| Sensitivity (Nominal) | — | 0.4 mV/kPa |
| Supply Voltage (Recommended) | — | 10 V DC |
| Supply Voltage (Maximum) | — | 16 V DC |
| Pressure Port Configuration | — | Dual axial ports (differential) |
| Gehäuse | — | 4-SIP Unibody (UNIBODY4F), 2.54 mm pitch |
| Package Body Dimensions | — | 15.56 mm x 15.56 mm x 5.33 mm |
| On-Chip Temperature Compensation | — | Yes (factory laser-trimmed) |
| Technology | — | Silicon piezoresistive MEMS strain-gauge bridge |
| Diaphragm Material | — | Silicon [DATA_NEEDED: confirm] |
| Linearity | — | 0.1% to 0.3% typical [DATA_NEEDED: confirm] |