MPX4100A vs MPX2100D Comparación
Comparación detallada lado a lado de MPX4100A por NXP Semiconductors y MPX2100D por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | MPX4100A | MPX2100D |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | Pressure Sensors | Pressure Sensors |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $10,85 | $17,80 |
| Pressure Type | Absolute | Differential |
| Operating Pressure Range | 20 kPa to 105 kPa (2.9 PSI to 15.23 PSI) | 0 kPa to 100 kPa (0 to 14.5 psi) |
| Tipo de salida | Analog Voltage | Analog ratiometric Wheatstone bridge (millivolts) |
| Rango de tensión de salida | 0.3 V to 4.9 V | — |
| Supply Voltage Range | 4.85 V to 5.35 V | — |
| Sensitivity | 54 mV/kPa (typical) | — |
| Full-Scale Output (Nominal) | 4.9 V at 105 kPa | — |
| Accuracy | ±1.8% | — |
| Corriente de alimentación | [DATA_NEEDED: typical supply current in mA] | — |
| Rango de temperatura de funcionamiento | -40C to +125C | -40C to +125C [DATA_NEEDED: confirm exact range from datasheet] |
| Port Type | Single axial port (no hose barb on basic element) | — |
| Encapsulado / Carcasa | 6-SIP Module (through-hole) | — |
| Tipo de montaje | Through Hole | Through-hole SIP module |
| Output Response Time | [DATA_NEEDED: response time in ms] | — |
| Estado RoHS | Compliant | Compliant [DATA_NEEDED: confirm from NXP product page] |
| Output Ratiometric to Vcc | Yes | — |
| Full-Scale Span (Typical) | — | 40 mV at 10 V excitation |
| Sensitivity (Nominal) | — | 0.4 mV/kPa |
| Supply Voltage (Recommended) | — | 10 V DC |
| Supply Voltage (Maximum) | — | 16 V DC |
| Pressure Port Configuration | — | Dual axial ports (differential) |
| Encapsulado | — | 4-SIP Unibody (UNIBODY4F), 2.54 mm pitch |
| Package Body Dimensions | — | 15.56 mm x 15.56 mm x 5.33 mm |
| On-Chip Temperature Compensation | — | Yes (factory laser-trimmed) |
| Technology | — | Silicon piezoresistive MEMS strain-gauge bridge |
| Diaphragm Material | — | Silicon [DATA_NEEDED: confirm] |
| Linearity | — | 0.1% to 0.3% typical [DATA_NEEDED: confirm] |