MPX4100A vs MPX2100D Comparaison
Comparaison détaillée côte à côte de MPX4100A par NXP Semiconductors et MPX2100D par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | MPX4100A | MPX2100D |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | Pressure Sensors | Pressure Sensors |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $10,85 | $17,80 |
| Pressure Type | Absolute | Differential |
| Operating Pressure Range | 20 kPa to 105 kPa (2.9 PSI to 15.23 PSI) | 0 kPa to 100 kPa (0 to 14.5 psi) |
| Type de sortie | Analog Voltage | Analog ratiometric Wheatstone bridge (millivolts) |
| Plage de tension de sortie | 0.3 V to 4.9 V | — |
| Supply Voltage Range | 4.85 V to 5.35 V | — |
| Sensitivity | 54 mV/kPa (typical) | — |
| Full-Scale Output (Nominal) | 4.9 V at 105 kPa | — |
| Accuracy | ±1.8% | — |
| Courant d'alimentation | [DATA_NEEDED: typical supply current in mA] | — |
| Plage de température de fonctionnement | -40C to +125C | -40C to +125C [DATA_NEEDED: confirm exact range from datasheet] |
| Port Type | Single axial port (no hose barb on basic element) | — |
| Boîtier / Format | 6-SIP Module (through-hole) | — |
| Type de montage | Through Hole | Through-hole SIP module |
| Output Response Time | [DATA_NEEDED: response time in ms] | — |
| Statut RoHS | Compliant | Compliant [DATA_NEEDED: confirm from NXP product page] |
| Output Ratiometric to Vcc | Yes | — |
| Full-Scale Span (Typical) | — | 40 mV at 10 V excitation |
| Sensitivity (Nominal) | — | 0.4 mV/kPa |
| Supply Voltage (Recommended) | — | 10 V DC |
| Supply Voltage (Maximum) | — | 16 V DC |
| Pressure Port Configuration | — | Dual axial ports (differential) |
| Boîtier | — | 4-SIP Unibody (UNIBODY4F), 2.54 mm pitch |
| Package Body Dimensions | — | 15.56 mm x 15.56 mm x 5.33 mm |
| On-Chip Temperature Compensation | — | Yes (factory laser-trimmed) |
| Technology | — | Silicon piezoresistive MEMS strain-gauge bridge |
| Diaphragm Material | — | Silicon [DATA_NEEDED: confirm] |
| Linearity | — | 0.1% to 0.3% typical [DATA_NEEDED: confirm] |