MPX5010DP vs MPX5010GS Vergleich
Detaillierter Direktvergleich von MPX5010DP von NXP Semiconductors und MPX5010GS von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | MPX5010DP | MPX5010GS |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | Pressure Sensors | Pressure Sensors |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $9,60 | $10,85 |
| Pressure Type | Differential | Vented Gauge |
| Operating Pressure Range | 0 kPa to 10 kPa (0 to 1.45 PSI) | 0 kPa to 10 kPa (0 to 1.45 PSI) |
| Maximum Overload Pressure | [DATA_NEEDED: max overload kPa] | — |
| Sensitivity | 450 mV/kPa (typical) | — |
| Ausgangsspannungsbereich | 0.2 V to 4.7 V | 0.2 V to 4.7 V at 5 V supply |
| Versorgungsspannung | 4.75 V to 5.25 V (5 V typical) | — |
| Versorgungsstrom | [DATA_NEEDED: supply current mA] | 5 mA typical |
| Linearity | ±1.5% VFSS (typical, 0-85 C) | — |
| Betriebstemperatur | 0 C to +85 C (compensated) | 0 C to +85 C (compensated) |
| Storage Temperature | [DATA_NEEDED: storage temperature C] | -40 C to +125 C |
| Port Configuration | Dual axial ports, 4.93 mm (0.19 in) tube | — |
| Gehäuse | 6-SIP Module | 6-SIP Module, Case 867E-03 |
| Ausgangstyp | Analog, ratiometric | Analog, ratiometric |
| Montageart | Through-hole (SIP) | Through-hole, axial tube |
| Technology | Piezoresistive, monolithic silicon, on-chip signal conditioned | — |
| RoHS-Status | Compliant | [DATA_NEEDED: RoHS status] |
| Maximum Overpressure | — | [DATA_NEEDED: maximum overpressure rating] |
| Betriebsversorgungsspannung | — | 4.75 V to 5.25 V (5 V typical) |
| Accuracy | — | +/-2.5% of full-scale span |
| Response Time | — | 1.0 ms typical |
| Port Type | — | Male 0.19" (4.93 mm) tube, axial |
| Sensing Technology | — | Piezoresistive (silicon strain gauge) |