MPX5010DP vs MPXV5010DP Vergleich
Detaillierter Direktvergleich von MPX5010DP von NXP Semiconductors und MPXV5010DP von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | MPX5010DP | MPXV5010DP |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | Pressure Sensors | Pressure Sensors |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $9,60 | $8,10 |
| Pressure Type | Differential | Differential |
| Operating Pressure Range | 0 kPa to 10 kPa (0 to 1.45 PSI) | 0 to 10 kPa (0 to 1.45 PSI) |
| Maximum Overload Pressure | [DATA_NEEDED: max overload kPa] | [DATA_NEEDED: maximum overload] |
| Sensitivity | 450 mV/kPa (typical) | — |
| Ausgangsspannungsbereich | 0.2 V to 4.7 V | 0.2 V to 4.7 V |
| Versorgungsspannung | 4.75 V to 5.25 V (5 V typical) | 5 V nominal (4.75 V to 5.25 V) |
| Versorgungsstrom | [DATA_NEEDED: supply current mA] | — |
| Linearity | ±1.5% VFSS (typical, 0-85 C) | — |
| Betriebstemperatur | 0 C to +85 C (compensated) | -40 C to +125 C |
| Storage Temperature | [DATA_NEEDED: storage temperature C] | — |
| Port Configuration | Dual axial ports, 4.93 mm (0.19 in) tube | — |
| Gehäuse | 6-SIP Module | 8-BSOP (0.475 in / 12.06 mm width), Dual Ports |
| Ausgangstyp | Analog, ratiometric | Analog, Ratiometric |
| Montageart | Through-hole (SIP) | Surface Mount |
| Technology | Piezoresistive, monolithic silicon, on-chip signal conditioned | Piezoresistive, MEMS, On-chip Signal Conditioned |
| RoHS-Status | Compliant | Compliant |
| Accuracy | — | 5 % (over 0 C to 85 C) |
| Response Time | — | 1 ms typical |
| Compensated Temperature | — | 0 C to 85 C |
| Port Style | — | Male, 0.13 in (3.3 mm) tube, Dual, Same Side |