MPX5010DP vs MPXV5010DP Comparación
Comparación detallada lado a lado de MPX5010DP por NXP Semiconductors y MPXV5010DP por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | MPX5010DP | MPXV5010DP |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | Pressure Sensors | Pressure Sensors |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $9,60 | $8,10 |
| Pressure Type | Differential | Differential |
| Operating Pressure Range | 0 kPa to 10 kPa (0 to 1.45 PSI) | 0 to 10 kPa (0 to 1.45 PSI) |
| Maximum Overload Pressure | [DATA_NEEDED: max overload kPa] | [DATA_NEEDED: maximum overload] |
| Sensitivity | 450 mV/kPa (typical) | — |
| Rango de tensión de salida | 0.2 V to 4.7 V | 0.2 V to 4.7 V |
| Tensión de alimentación | 4.75 V to 5.25 V (5 V typical) | 5 V nominal (4.75 V to 5.25 V) |
| Corriente de alimentación | [DATA_NEEDED: supply current mA] | — |
| Linearity | ±1.5% VFSS (typical, 0-85 C) | — |
| Temperatura de funcionamiento | 0 C to +85 C (compensated) | -40 C to +125 C |
| Storage Temperature | [DATA_NEEDED: storage temperature C] | — |
| Port Configuration | Dual axial ports, 4.93 mm (0.19 in) tube | — |
| Encapsulado | 6-SIP Module | 8-BSOP (0.475 in / 12.06 mm width), Dual Ports |
| Tipo de salida | Analog, ratiometric | Analog, Ratiometric |
| Tipo de montaje | Through-hole (SIP) | Surface Mount |
| Technology | Piezoresistive, monolithic silicon, on-chip signal conditioned | Piezoresistive, MEMS, On-chip Signal Conditioned |
| Estado RoHS | Compliant | Compliant |
| Accuracy | — | 5 % (over 0 C to 85 C) |
| Response Time | — | 1 ms typical |
| Compensated Temperature | — | 0 C to 85 C |
| Port Style | — | Male, 0.13 in (3.3 mm) tube, Dual, Same Side |