MRF377HR3 vs MRF8S9170NR3 Vergleich
Detaillierter Direktvergleich von MRF377HR3 von NXP Semiconductors und MRF8S9170NR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | MRF377HR3 | MRF8S9170NR3 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $68,50 | $38,50 |
| Transistortyp | N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | Lateral RF Power MOSFET (Silicon) | RF Power LDMOS |
| Frequency Range | 470 MHz to 860 MHz | 920 MHz to 960 MHz |
| Drain-Source Voltage (V DSS) | 65 V (max) | — |
| Operating Drain Voltage | 32 V (typical) | — |
| Continuous Output Power (P out) | 45 W (CW, push-pull) | — |
| Power Gain (G ps) | 18.2 dB (typical at 860 MHz) | — |
| Drain Efficiency | [DATA_NEEDED: drain efficiency %] | — |
| Test Current | 2 A | — |
| Configuration | Push-Pull (internally matched) | — |
| Gehäuse | NI-860C3 (ceramic flange) | OM-780-2 (ceramic flange) |
| Montageart | Flange / Screw Mount (Surface Mount variant per HR3 suffix) | Surface Mount / Flange Mount (bolt-down thermal pad) |
| Betriebstemperatur | -40 C to +200 C (junction) | [DATA_NEEDED: Tj max and operating range from datasheet] |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Lead-Free / RoHS | Lead Free / RoHS Compliant | Lead Free (per digchip listing) |
| Case Connection | Source | — |
| Maximum Power Dissipation | 648 W (per Partstack listing) | — |
| Manufacturer | — | NXP Semiconductors |
| Output Power (Average, W-CDMA) | — | 50 W |
| Power Gain (Typical) | — | 19.3 dB at 920 MHz, 28 V, 1 A quiescent bias |
| Drain-Source Voltage Rating (Vdss) | — | 70 V |
| Operating Drain Voltage (Test Condition) | — | 28 V |
| Quiescent Bias Current (Idq, Test Condition) | — | 1 A |
| Drain Current (Operating) | — | [DATA_NEEDED: typical operating Id at 50 W Pout] |
| Class of Operation | — | Class AB, Class C (W-CDMA) |
| ESD Protection | — | [DATA_NEEDED: ESD class rating from datasheet] |
| Impedance Characterization | — | Series-equivalent large-signal impedance parameters provided |
| Test Conditions Note | — | 100% PAR tested for guaranteed output power capability |