MRF377HR3 vs MRF8S9170NR3 Comparación
Comparación detallada lado a lado de MRF377HR3 por NXP Semiconductors y MRF8S9170NR3 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | MRF377HR3 | MRF8S9170NR3 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $68,50 | $38,50 |
| Tipo de transistor | N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | Lateral RF Power MOSFET (Silicon) | RF Power LDMOS |
| Frequency Range | 470 MHz to 860 MHz | 920 MHz to 960 MHz |
| Drain-Source Voltage (V DSS) | 65 V (max) | — |
| Operating Drain Voltage | 32 V (typical) | — |
| Continuous Output Power (P out) | 45 W (CW, push-pull) | — |
| Power Gain (G ps) | 18.2 dB (typical at 860 MHz) | — |
| Drain Efficiency | [DATA_NEEDED: drain efficiency %] | — |
| Test Current | 2 A | — |
| Configuration | Push-Pull (internally matched) | — |
| Encapsulado | NI-860C3 (ceramic flange) | OM-780-2 (ceramic flange) |
| Tipo de montaje | Flange / Screw Mount (Surface Mount variant per HR3 suffix) | Surface Mount / Flange Mount (bolt-down thermal pad) |
| Temperatura de funcionamiento | -40 C to +200 C (junction) | [DATA_NEEDED: Tj max and operating range from datasheet] |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Lead-Free / RoHS | Lead Free / RoHS Compliant | Lead Free (per digchip listing) |
| Case Connection | Source | — |
| Maximum Power Dissipation | 648 W (per Partstack listing) | — |
| Manufacturer | — | NXP Semiconductors |
| Output Power (Average, W-CDMA) | — | 50 W |
| Power Gain (Typical) | — | 19.3 dB at 920 MHz, 28 V, 1 A quiescent bias |
| Drain-Source Voltage Rating (Vdss) | — | 70 V |
| Operating Drain Voltage (Test Condition) | — | 28 V |
| Quiescent Bias Current (Idq, Test Condition) | — | 1 A |
| Drain Current (Operating) | — | [DATA_NEEDED: typical operating Id at 50 W Pout] |
| Class of Operation | — | Class AB, Class C (W-CDMA) |
| ESD Protection | — | [DATA_NEEDED: ESD class rating from datasheet] |
| Impedance Characterization | — | Series-equivalent large-signal impedance parameters provided |
| Test Conditions Note | — | 100% PAR tested for guaranteed output power capability |