MRF6P21190HR5 - 44W LDMOS RF Power Transistor 2.12GHz | NXP
Teilenummer: MRF6P21190HR5 ✗ Abgekündigt| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $95 | $95,00 |
| 10 | $86.5 | $865,00 |
| 100 | $78.2 | $7.820,00 |
| 500 | $71.4 | $35.700,00 |
| 1.000 | $65 | $65.000,00 |
MRF6P21190HR5 Übersicht
The LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is a category of RF power transistor that builds on silicon CMOS processing but adds a lightly doped drift region between the channel and the drain. This drift region sustains high breakdown voltage (rated to 68 V on the MRF6P family) while preserving a short channel for high ft, allowing the device to deliver tens of watts at GHz frequencies. LDMOS sits inside the broader RF power hierarchy: RF MOSFET -> RF power transistor -> RF semiconductor -> discrete semiconductor. Compared with silicon bipolar and SiC/GaN HEMT alternatives, LDMOS remains the dominant technology for sub-3 GHz macro-cell base-station PAs due to its mature supply chain and favorable linearity-versus-cost trade-off.
Key features of this MRF6P21190HR5 include a 1.9 A quiescent drain current at 28 V test, integrated ESD protection, internal input matching for broadband operation across the 1930-2120 MHz wireless band, and an NI-1230 bolt-down ceramic flange that provides a low thermal resistance path to the system heatsink. The ceramic package supports gold-plated leads for lead-free reflow-compatible mounting on PCBs and direct chassis mounting with screws and indium or thermal grease for heat extraction.
Typical applications include W-CDMA, LTE-FDD, and TD-SCDMA driver or final PAs in macro-cell base stations, repeater amplifiers, and high-power broadband industrial/scientific RF generators. The wide 28 V operation and high gain also suit the device for Doherty PA final stages where efficiency must be maximized at 6-9 dB output back-off.
When designing with this LDMOS transistor, careful attention to the PCB layout, lead inductance, and the heatsink interface thermal resistance is mandatory because internal dissipation can exceed 90 W at P3dB. Designers must also provide sequence-correct gate bias (negative Vgg first, then Vdd) to prevent thermal breakdown during turn-on transient.
This page synthesizes distributor inventory, parametric comparison with sibling and competitor RF MOSFETs, and practical thermal/PCB layout guidance beyond what the manufacturer datasheet alone provides.
Drop-in-Alternativen für MRF6P21190HR5 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit MRF6P21190HR5 (gleiche Bauform und Footprint) – abweichend in Mounting Type, Package / Case, Power Gain, Technology, Transistor Type.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MRF6P21190HR6
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRF6P21190HR3
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
MRF6P18190HR5
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
MRF6P27190HR5
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
MRF6P24190HR5
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
MRF6P21190HR5 Grenzwerte & elektrische Eigenschaften
| Transistortyp | LDMOS, N-Channel |
| Application | RF Power Amplifier (W-CDMA / LTE base station) |
| Frequency | 2.12 GHz (operating range 1930-2120 MHz) |
| Test Supply Voltage (Vdd) | 28 V |
| Voltage - Rated (Vds max) | 68 V |
| Output Power (Pout) | 44 W (CW, at 2.12 GHz) |
| Power Gain | 15.5 dB |
| Test Current (Idq) | 1.9 A |
| Drain Efficiency (typical) | 33 % |
| Gehäuse / Bauform | NI-1230 (ceramic, bolt-down flange) |
| Supplier Device Package | NI-1230 |
| Montageart | Chassis-mount, bolt-down flange with PCB lead |
| Betriebstemperatur | -40 C to +150 C (junction) |
| Lead-Free / Finish | Gold-plated leads (typical for NI-1230 family) |
| Technology | LDMOS (Laterally Diffused MOS) |
| Polarity / Channel | N-Channel |
MRF6P21190HR5 Pin-Konfiguration
| Pin 1 | Drain (RF Out) — RF output / drain bias feedthrough |
| Pin 2 | Gate (RF In) — RF input / gate bias feedthrough |
| Pin 3 | Source — Source (substrate) - also via flange |
| Pin 4 | NC — Not connected (per datasheet) - mechanical pin |
| Pin 5 | Flange / Case — Bolt-down flange - primary thermal and source ground path |
MRF6P21190HR5 Sicherer Arbeitsbereich (typical, TC=25C)
Typische Anwendungen
MRF6P21190HR5 ist geeignet für 6 Anwendungs: W-CDMA / LTE Macro-Cell Base Station Power Amplifier, Doherty Final Stage for Multi-Carrier 3G/4G, RF Repeater / Booster Amplifier, Industrial / Scientific RF Generator (2 GHz band), Public Safety / Tetra Band Driver Stage, Drone / UAV Cellular Mesh Radio.
W-CDMA / LTE Macro-Cell Base Station Power Amplifier
The MRF6P21190HR5's 44 W Pout at 2.12 GHz and 15.5 dB power gain make it a direct fit for the final stage of a macro-cell W-CDMA or LTE-FDD Band-1 base-station PA. It is biased at Vdd=28 V, Idq=1.9 A, and delivers its rated output with W-CDMA-like high-PAPR signals while maintaining the linearity needed for ACLR compliance. Placed at the output of the Doherty combining structure, it pairs with the MRF6P18190HR5 main amplifier to form a high-efficiency 90+ W Doherty PA. Per the NXP datasheet, the device has a junction-to-case thermal resistance supporting continuous operation on a 0.3-0.5 C/W heatsink.
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Doherty Final Stage for Multi-Carrier 3G/4G
The 44 W, 15.5 dB-gain MRF6P21190HR5 is commonly deployed as the peaking amplifier in 2-way Doherty PA final stages for multi-carrier W-CDMA, TD-SCDMA, and LTE-FDD bands. The LDMOS technology delivers the high linearity and 32-33% drain efficiency needed at 6-9 dB output back-off, where Doherty load modulation recovers efficiency lost to traditional Class-AB bias. According to the NXP MRF6P reference design, two NI-1230 devices can be combined through a quadrature coupler to give ~88 W combined Pout. The flat gain across 1930-2120 MHz supports wideband multi-carrier signals up to 20 MHz LTE carrier aggregation.
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RF Repeater / Booster Amplifier
The MRF6P21190HR5 fits the final output stage of cellular RF repeater and signal-booster amplifier systems that retransmit 2.1 GHz signals indoors or in shadow zones. Its 15.5 dB gain reduces driver-stage gain requirements, and its 33% drain efficiency keeps DC power consumption reasonable in always-on repeating equipment. Per NXP datasheet characterization, the device maintains stable gain and phase through all required output-power levels. PCB layout uses the recommended test fixture with input/output microstrip matching on a high-frequency substrate (Rogers RO4350B) and a bolt-down flange cooling plate for the NI-1230.
Empfohlen
Industrial / Scientific RF Generator (2 GHz band)
Industrial and scientific RF generators operating around 2 GHz for plasma driving, dielectric heating, and particle accelerator RF chains can use the MRF6P21190HR5 for its 44 W continuous output capability. While characterized for W-CDMA signals, the device's high breakdown voltage (68 V) and rugged LDMOS die are well-suited to continuous-wave industrial loads. Designers should derate from 44 W to ~30 W CW to stay within SOA on industrial heat-sink enclosures. The NI-1230 flange bolts directly to a liquid-cooled cold plate where forced air is not sufficient.
Empfohlen
Public Safety / Tetra Band Driver Stage
Although the MRF6P21190HR5 is rated for 1930-2120 MHz commercial wireless bands, the same LDMOS die in a board-level tuning network can be deployed as a driver stage in TETRA, DMR, and public-safety band high-power amplifiers operating near 1.9-2.1 GHz. Its 15.5 dB gain and 44 W output provide ample drive margin ahead of higher-power finals. The NXP MRF6P family datasheet notes the device is qualified to ±10% bias variation, providing robust margin for the duty-cycled nature of public-safety waveforms. The NI-1230 flange accepts the same heatsink toolkit as the higher-power MRF8 family.
Empfohlen
Drone / UAV Cellular Mesh Radio
Long-endurance UAV cellular mesh radios operating in band-1 / band-4 LTE uplinks require compact, lightweight, high-efficiency 2 GHz PAs, and the MRF6P21190HR5 is suited for these applications because of its high drain efficiency and direct chassis mount. At 28 V supplied from a tethered or onboard LiPo stack, the device draws modest DC current at typical mesh-radio output levels (a few watts). The bolt-down NI-1230 flange allows direct mounting to a UAV frame or shielded module cavity as both thermal path and ground reference. Designers must carefully control the PCB lead inductance, since UAV vibration can stress solder joints.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MRF6P21190HR5 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MRF6P21190HR6 | MRF6P21190HR3 | MRF6P18190HR5 | MRF6P27190HR5 | MRF6P24190HR5 |
|---|---|---|---|---|---|---|
| Package | NI-1230 | NI-1230 (same) | NI-1230 (same) | NI-1230 (same) | NI-1230 (same) | NI-1230 (same) |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Frequency Band | 1.93 - 2.12 GHz | 1.93 - 2.12 GHz | 1.93 - 2.12 GHz | 1.805 - 1.88 GHz | 2.50 - 2.70 GHz | 2.30 - 2.40 GHz |
| Output Power (Pout) | 44 W | 44 W | 44 W | 44 W | 44 W | 44 W |
| Power Gain | 15.5 dB | 15.5 dB | 15.5 dB | 15.5 dB | 14.5 dB | 15.5 dB |
| Test Voltage (Vdd) | 28 V | 28 V | 28 V | 28 V | 28 V | 28 V |
| Quiescent Current (Idq) | 1.9 A | 1.9 A | 1.9 A | 1.9 A | 1.9 A | 1.9 A |
| Rated Voltage (Vds max) | 68 V | 68 V | 68 V | 68 V | 68 V | 68 V |
| Drain Efficiency (typical) | 33 % | 33 % | 33 % | 33 % | 30 % | 32 % |
Wichtigste Unterscheidungsmerkmale
- Industry-standard NI-1230 package with bolt-down flange (vs. MRF8P20190HS (NXP MRF8 family))
- High 15.5 dB gain reduces driver-stage gain burden (vs. BLF188XR (Ampleon))
- Tape-and-reel assembly-ready option in same die (vs. MRF6P21190HR5-R6 (NI-1230))
Designhinweise
At 44 W Pout with ~33% drain efficiency, internal dissipation reaches about 91 W. The NI-1230 flange presents a low junction-to-case thermal resistance of approximately 0.45 C/W (per the NXP datasheet), so the system heatsink plus thermal interface must keep the case below ~109 C to stay under the 150 C junction limit. Estimated: this requires a system thermal resistance (heatsink + TIM) below 0.5 C/W at 100 W - implement a 4-6 inch finned aluminum heatsink with forced-air cooling, or a liquid cold plate. Excessive junction temperature will accelerate electromigration in the LDMOS die.
Use a high-frequency PCB substrate such as Rogers RO4350B or RO4003C with at least 8-10 mil dielectric thickness for the input and output matching networks. Per NXP's reference design, gate and drain leads should be bonded directly with minimal trace length to avoid common-lead inductance that causes instability. Maintain at least 0.5 mm spacing between the bolt-down flange's PCB land and any signal trace, as the flange carries both source ground and main thermal path.
Never apply Vdd before Vgg, and never apply more than -3.5 V on the gate to avoid exceeding the gate-source breakdown. Use a sequenced bias controller such as NXP's MC33071 or comparable, with gate pinch-off first, then Vdd ramp, then gate-bias rise to Idq=1.9 A. Power down in reverse order (Vgg off before Vdd). Inadequate bias sequencing is the most common cause of LDMOS catastrophic failure during turn-on and turn-off transients.
Input and output matching networks should each be laid out on a separate side of the part to maximize RF isolation; if not feasible, place a copper-foil shield between them. Keep gate and drain chokes well-de-Q'd by using paralleled ferrite beads. Per the NXP MRF6P reference design, avoid bond-wire length variation between gate and drain leads - imbalanced lead inductance causes odd-mode instability at P3dB compression.
Compliance-Informationen
NI-1230 gold-plated ceramic flange is lead-free finish per typical NXP power-package standards. RoHS/REACH compliance for this specific obsolete part not verified in current data; mark as [DATA_NEEDED] and verify lot-by-lot with manufacturer. Not automotive qualified.
