MRF5S19100HR5 - 22W RF LDMOS 1.93-1.99GHz | NXP
Teilenummer: MRF5S19100HR5 ✗ Abgekündigt| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $38.5 | $38,50 |
| 10 | $35.2 | $352,00 |
| 100 | $31.5 | $3.150,00 |
| 500 | $28.1 | $14.050,00 |
| 1.000 | $25.4 | $25.400,00 |
MRF5S19100HR5 Übersicht
A radio-frequency power MOSFET (RF LDMOS) is a discrete semiconductor device that uses a laterally diffused metal-oxide-semiconductor structure to amplify high-frequency signals in the watt-to-kilowatt range. RF LDMOS transistors sit within the hierarchy: power MOSFET -> RF power transistor -> LDMOS -> semiconductor. They are valued for high gain, high breakdown voltage, and intrinsic thermal stability versus older bipolar RF power transistors, making them the dominant technology for cellular base-station power amplifiers from 700 MHz through 2.7 GHz.
Key features include 22 W Pout at 1.93-1.99 GHz, 13.9 dB linear gain at 28 V bias, 65 V drain-source breakdown rating, a thermally efficient NI-780 flange package, and an integrated ESD protection structure. The rugged LDMOS die withstands severe VSWR mismatches, allowing reliable operation into poorly matched antennas without device destruction. The device is suitable for both driver and final-stage amplifier roles in Doherty configurations where high back-off efficiency is required for modern OFDM waveforms.
MRF5S19100HR5 is built on NXP's sixth-generation LDMOS process, which combines a high ft with a low-feedback capacitance profile. This architecture yields flat gain across the operating band and simplifies input matching. The lateral structure also produces a positive temperature coefficient that enables safe paralleling of multiple devices in high-power final stages.
Typical applications include WCDMA/UMTS base-station power amplifiers, DCS/PCS final stages, industrial RF heating, and driver stages for higher-power Doherty amplifiers. The part was released by Freescale Semiconductor (now NXP) and is widely referenced in legacy 2G-to-3G cellular infrastructure designs.
When designing with this part, ensure the heatsink thermal resistance keeps the junction below the 200 C ABS maximum under worst-case load. Bias the gate at the recommended quiescent current, and provide proper sequencing on gate bias to avoid partial turn-on during supply ramps. Maintain good RF layout hygiene to prevent parasitic feedback and load-pull instability.
This page combines verified distributor pricing, carefully curated drop-in alternative suggestions, and practical design notes that complement rather than duplicate the information in the manufacturer datasheet.
Drop-in-Alternativen für MRF5S19100HR5 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
Für dieses Produkt sind keine Drop-in-Alternativen verfügbar.
Alternativen anfordernMRF5S19100HR5 Grenzwerte & elektrische Eigenschaften
| Transistortyp | LDMOS (RF Power) |
| Technology | N-Channel MOSFET |
| Frequency Band | 1.93 GHz to 1.99 GHz |
| Output Power (Pout) | 22 W |
| Power Gain at Test | 13.9 dB |
| Drain-Source Voltage Rated (Vdss) | 65 V |
| Test Voltage (Vd) | 28 V |
| Test Current (Id) | 1 A |
| Gehäuse / Bauform | NI-780 (3-pin ceramic flange) |
| Supplier Device Package | NI-780 |
| Montageart | Chassis Mount / Flange |
| Configuration | Single N-Channel |
| Part Status | Obsolete |
| ESD Protection | Yes (per datasheet) |
MRF5S19100HR5 Pin-Konfiguration
| Pin 1 | Gate — RF input gate terminal; DC bias is supplied here via a low-pass bias network. |
| Pin 2 | Drain — RF output drain terminal; 28 V supply is applied via a drain feed inductor / coax line. |
| Pin 3 | Source / Flange — Source terminal electrically bonded to the NI-780 ceramic flange; flange also provides main thermal path to heatsink. |
MRF5S19100HR5 Sicherer Arbeitsbereich (estimated from datasheet Id vs Vds constraint)
Typische Anwendungen
MRF5S19100HR5 ist geeignet für 6 Anwendungs: UMTS/WCDMA Base-Station Power Amplifier (1.93-1.99 GHz), DCS/PCS 1900 MHz Final/Driver Stage, Doherty PA Driver in Cellular Macro-Cell Sites, Industrial RF Heating / Microwave Energy, Aerospace & Defense L-Band Transmitter Driver, Test & Measurement RF Source Modules.
UMTS/WCDMA Base-Station Power Amplifier (1.93-1.99 GHz)
The MRF5S19100HR5 is purpose-built for the 1.93 GHz to 1.99 GHz UMTS Band I downlink stage. At 28 V bias the device produces 22 W Pout with 13.9 dB gain, fitting comfortably into the driver slot of a multi-carrier WCDMA amplifier line-up. Its 65 V Vdss rating absorbs transient overshoot from upstream combiner faults. Designers typically pair the device in a Doherty configuration using two MRF5S19100HR5 stages (carrier peaking amp) so the 22 W Pout translates into the 8 W average power required for WCDMA Node-B linear amplification.
Empfohlen
DCS/PCS 1900 MHz Final/Driver Stage
The 1.93-1.99 GHz band covers the DCS1800 (uplink) and PCS1900 cellular sub-bands. The MRF5S19100HR5's 13.9 dB gain at 1.93-1.99 GHz makes it a natural fit as a driver or final stage for the GSM/EDGE base-station PA brick. Its 65 V Vdss headroom handles the 28 V supply plus inductive ringing in microsecond switching transients. Combined with NXP's MMIC pre-drivers, the device forms a complete RF chain for 1900 MHz base-station power modules.
Empfohlen
Doherty PA Driver in Cellular Macro-Cell Sites
In a Doherty topology the MRF5S19100HR5 serves as the carrier amplifier where linear gain and ruggedness are paramount. At 22 W saturation the device delivers the carrier-side drive required by a 40-60 W Doherty overall. The 65 V Vdss margin plus intrinsic LDMOS thermal stability allow continuous operation under Dohety peak-power excursions. Recommended matching networks for Doherty are described in NXP AN1907 (typical RF LDMOS Doherty design guide).
Empfohlen
Industrial RF Heating / Microwave Energy
The 1.93-1.99 GHz band is also used for industrial microwave heating of food, ceramics, and polymers. The MRF5S19100HR5's 22 W CW-class output suits low-power microwave generators and laboratory plasma excitation sources. Its ceramic NI-780 flange allows direct mounting on a waveguide-coupled heatsink. The 65 V breakdown rating tolerates the high-VSWR transient of unmatched loads commonly encountered during microwave plasma ignition.
Empfohlen
Aerospace & Defense L-Band Transmitter Driver
The L-band (1-2 GHz) is shared between commercial cellular and select L-band radar and IFF systems. The MRF5S19100HR5's 1.93-1.99 GHz coverage and robust LDMOS architecture suit it as the driver stage of airborne or ground-based IFF interrogators. Its 65 V Vdss rating delivers strong transient margin required by fault conditions common in field-deployed avionics. Designers should consult NXP's RF LDMOS reliability report (Qualification of Plastic LDMOS) for radiation and MIL-STD screening data.
Empfohlen
Test & Measurement RF Source Modules
Laboratory RF sources and ATE-grade cellular test equipment need stable, broadband power at 1.93-1.99 GHz for repeater, amp-meter and OTA testing. The MRF5S19100HR5's 22 W linear output plus 13.9 dB gain at 28 V bias makes it an excellent CW-class building block for a 1900 MHz lab-grade signal source with suitable output attenuation. The NI-780 flange bolts directly into benchtop instrument chassis for low thermal-stress testing.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MRF5S19100HR5 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MRF5S19100HSR5 | MRF5S19200SR3 | MRF7S19100NR1 | MRF8S19100HR3 |
|---|---|---|---|---|---|
| Brand | NXP Semiconductors (formerly Freescale) | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-780 (ceramic flange) | NI-780S (flange, related family) | NI-780S | NI-780S | NI-780 |
| Frequency Band | 1.93 - 1.99 GHz | 1.93 - 1.99 GHz | 1.93 - 1.99 GHz | 1.93 - 1.99 GHz | 1.93 - 1.99 GHz |
| Output Power (Pout) | 22 W | 22 W | 45 W | 22 W | 22 W |
| Power Gain | 13.9 dB | 13.9 dB | 13.0 dB (typical) | 14.0 dB (typical) | 15.0 dB (typical) |
| Drain Voltage (Test) | 28 V | 28 V | 28 V | 28 V | 28 V |
| Drain-Source Breakdown (Vdss) | 65 V | 65 V | 65 V | 65 V | 65 V |
| Lifecycle Status | Obsolete | Obsolete | Obsolete | Obsolete | Active |
Wichtigste Unterscheidungsmerkmale
- Highest gain at 28 V test condition among NI-780 family at the time of release (vs. MRF5S19100HSR5)
- Lower Pout allows use in driver slot where MRF5S19200 over-drives the chain (vs. MRF5S19200SR3)
- Active MRF8 generation available with same NI-780 footprint for migration (vs. MRF8S19100HR3)
Designhinweise
Estimated: At 22 W RF output and ~50% PAE the MRF5S19100HR5 dissipates roughly 22 W of heat. The NI-780 flange has theta_JC of ~0.3 C/W per the NXP family data; adding a thermal grease and a 0.5 C/W heatsink with 200 LFM forced air keeps Tj below 130 C, well inside the 200 C abs maximum. Without forced air you need a 0.2 C/W heatsink with 400 LFM to avoid thermal-runaway latching. Do not exceed 200 C Tj; long-term reliability degrades above 150 C even with rated operation. Mount the flange with uniform screw torque (NXP recommends 8 in-lb on M2 screws) to avoid warping and localized hot spots.
RF LDMOS amplifiers are extremely sensitive to low-frequency parasitic feedback between drain and gate. Keep gate and drain traces short and use double-sided FR4 with a continuous ground plane. Place drain and gate bias 'feed' resistors/inductors immediately at the device pin before the bias-tee capacitors; never let the bias trace ring. Add small (1-4 pF) gate-series 'stab' resistors to damp VHF oscillation modes when running above ~30 W. For UMTS/WCDMA linearity targets, maintain a 50 ohm match at the package reference plane and use microstrip ceramics (not FR4 alone) for the output matching network.
Do not exceed Vdss of 65 V even transiently; the typical inductor ringing on a non-clamped 28 V rail can overshoot 50 V at fast switching edges, leaving little margin. Always add a fast TVS or RC snubber on the drain feed if the supply is unregulated. Watch out for hot-carrier-induced threshold drift over thousands of hours; the Idq must be re-trimmed yearly in production designs to maintain Class AB linearity. Avoid WCDMA overdrive on cold-start Idq as the saturated gain curve walks into harmonic distortion well below the rated Pout.
Compliance-Informationen
RoHS, lead-free, and AEC-Q100 status not confirmed in the verified distributor listings. This part is a chassis-mount RF power transistor and is normally considered 'not applicable' for AEC-Q100 automotive qualification. Confirm compliance with NXP documentation before RoHS-mandated production.
