MRF6S18100NBR1 - 100W RF LDMOS Power Transistor | NXP
Teilenummer: MRF6S18100NBR1 ✗ Abgekündigt| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $95 | $95,00 |
| 10 | $88 | $880,00 |
| 100 | $80.5 | $8.050,00 |
| 500 | $74.2 | $37.100,00 |
| 1.000 | $68.9 | $68.900,00 |
MRF6S18100NBR1 Übersicht
A radio-frequency power transistor (RF FET / RF MOSFET) is a specialized discrete semiconductor that converts DC supply energy into a high-frequency, high-power RF signal for the final stage of a transmitter. The LDMOS (Laterally Diffused Metal-Oxide Semiconductor) family is the dominant technology for sub-3 GHz macro-cell base-station power amplifiers because it combines high breakdown voltage, high gain, good efficiency, and reasonable cost. LDMOS sits within the broader taxonomy: LDMOS -> RF power MOSFET -> power MOSFET -> MOSFET -> discrete semiconductor.
Key features of the MRF6S18100NBR1 include 14.5 dB typical power gain at 1990 MHz, 100 W pulsed output power under GSM/EDGE drive, a 68 V drain-source voltage rating (V(BR)DSS), and an integrated ceramic over-molded package with a metalized flange for direct PCB or heatsink mounting. The part is also characterized for ruggedness into a 10:1 VSWR load at the specified supply voltage, a key requirement for cellular base-station final-stage amplifiers that may see antenna mismatch events.
Architecturally, the device uses a single-ended N-channel lateral MOSFET die optimized for class-AB or class-C biasing in common-source configuration. Internal matching networks are not integrated; the matching, bias sequencing, and harmonic filtering must be designed on the external PCB following the manufacturer reference design from the MRF6S18100N datasheet family.
Typical applications include GSM/GSM EDGE 1800 MHz base-station final-stage PAs, multicarrier TDMA/CDMA driver or output stages, and 1.9 GHz DECT/W-CDMA amplifier blocks. Designers favor this part when an external heatsink or cold plate is available, since 100 W pulsed RF at 28 V dissipates significant DC power.
When designing with this part, observe the 68 V maximum drain voltage, keep lead length to the gate and drain short to minimize parasitic inductance, and follow the reference-design PCB stackup for thermal management. Always use sequence bias (drain-on before gate-on) during turn-on to avoid parametric oscillation.
This page synthesizes distributor availability, drop-in same-package alternatives, and PCB-level design notes not found in the manufacturer datasheet alone.
Drop-in-Alternativen für MRF6S18100NBR1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit MRF6S18100NBR1 (gleiche Bauform und Footprint) – abweichend in Application, Mounting Type, Operating Mode, Test Frequency, Transistor Type.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
Für dieses Produkt sind keine Drop-in-Alternativen verfügbar.
Alternativen anfordernMRF6S18100NBR1 Grenzwerte & elektrische Eigenschaften
| Transistortyp | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Application | RF Power Amplifier (GSM/GSM EDGE base station) |
| Frequency Range | 1805 MHz to 1990 MHz |
| Test Frequency | 1.99 GHz |
| Drain-Source Voltage (V(BR)DSS) | 68 V |
| Test Supply Voltage (VDD) | 28 V |
| Test Drain Current | 900 mA |
| Output Power (Pout) | 100 W |
| Power Gain (Gps) | 14.5 dB (typical at 1.99 GHz) |
| Gehäuse / Bauform | TO-272 WB-4 |
| Supplier Device Package | TO-272 WB-4 |
| Montageart | Surface Mount / Flange Mount |
| Configuration | Single, common-source |
| RoHS-Status | Compliant (per NXP product page) |
| Operating Mode | Class AB / Class C (per design) |
MRF6S18100NBR1 Pin-Konfiguration
| Pin 1 | GATE — RF input / Gate bias (sequence bias from VGG) |
| Pin 2 | DRAIN — RF output / Drain supply (VDD, 28 V nominal) |
| Pin 3 | NC — Not connected (per datasheet - mechanical pad only) |
| Pin 4 | FLANGE — Source / Ground / Thermal mounting flange (drain-side lead) |
Sicherer Arbeitsbereich (DC) - MRF6S18100N family
Typische Anwendungen
MRF6S18100NBR1 ist geeignet für 6 Anwendungs: GSM/GSM EDGE 1800 MHz Base Station Final-Stage PA, Multicarrier TDMA/CDMA Power Amplifier, Industrial/Scientific RF Power Source, 1.9 GHz DECT/Wireless-LAN Driver Stage, RF Power Amplifier Reference Design / Evaluation, Replacement / Repair of Obsolete Cellular PA Lineups.
GSM/GSM EDGE 1800 MHz Base Station Final-Stage PA
The MRF6S18100NBR1 is engineered specifically for GSM and GSM EDGE base-station final-stage power amplifiers covering the 1805-1990 MHz downlink. Its 100 W pulsed output at 28 V and 14.5 dB power gain allow a single device to deliver the full rated carrier power without driver-stage complexity, while the LDMOS architecture provides the ruggedness required to survive antenna VSWR events at full mismatch. Paired with the manufacturer reference design PCB and proper sequence biasing (drain-on before gate-on), it drops into existing GSM 1800/1900 PA lineups with minimal redesign. Compared to bipolar finals of the same era, the LDMOS die offers higher gain and better thermal stability under multicarrier EDGE drive.
Empfohlen
Multicarrier TDMA/CDMA Power Amplifier
For multicarrier TDMA and CDMA amplifier applications inside the 1805-1990 MHz band, the MRF6S18100NBR1's high gain (14.5 dB) and 100 W Pout allow it to drive multiple carriers simultaneously from a single final stage when properly linearized. Designers typically bias in Class-AB at a moderate quiescent current to balance linearity and efficiency, and add a digital predistortion (DPD) loop around the part in modern designs. The 68 V V(BR)DSS rating gives ample headroom above the 28 V nominal rail to tolerate the high drain-voltage peaks generated by multicarrier envelope modulation. Use harmonic filter networks on the output to meet out-of-band emissions for cellular systems.
Empfohlen
Industrial/Scientific RF Power Source
The MRF6S18100NBR1 also serves as a high-power RF source for industrial and scientific RF heating, plasma generation, and laboratory amplifiers operating near 1.9 GHz. Its 100 W pulsed CW-capable output can drive non-cellular loads such as RF plasma chambers or dielectric heaters. The TO-272 WB-4 ceramic over-molded package and metalized flange allow mounting on liquid-cooled cold plates for high-duty-cycle operation, which is essential when driving non-pulsed loads. Note that the part is biased for cellular linearity rather than pure CW efficiency, so additional harmonic filtering may be required for non-licensed-band applications.
Empfohlen
1.9 GHz DECT/Wireless-LAN Driver Stage
Although designed for cellular, the MRF6S18100NBR1's 14.5 dB gain at 1.99 GHz makes it an effective driver for higher-power follow-on stages in 1.9 GHz DECT and proprietary wireless-LAN amplifiers. Used as a driver, it easily delivers the 10-30 W input required by downstream PA finals while still providing headroom for AGC control. External matching networks are tuned to the specific downstream load rather than the 50 ohm GSM target, so expect a re-tuning of the input network if repurposed. Its 68 V V(BR)DSS gives excellent transient robustness in non-cellular mismatch scenarios.
Empfohlen
RF Power Amplifier Reference Design / Evaluation
Engineers building evaluation boards, reference designs, or training fixtures for 1.9 GHz GSM PAs typically reach for the MRF6S18100NBR1 because the manufacturer datasheet includes a complete reference PCB layout, bias table, and S-parameter data. The TO-272 WB-4 footprint is well-documented and easy to lay out on standard RF-grade PCB substrates (Rogers RO4003C or equivalent). Educational and proof-of-concept labs can use this part to demonstrate cellular PA techniques such as sequence biasing, DPD integration, and load-pull characterization without re-spinning a custom footprint.
Empfohlen
Replacement / Repair of Obsolete Cellular PA Lineups
Because the MRF6S18100NBR1 was widely designed into 2000s-era GSM base stations, it remains a critical repair and maintenance part for carriers and tower operators with legacy infrastructure. A drop-in replacement (MRF6S18100NR1 or the -N generic MPN) restores full output without PCB rework. The 14.5 dB gain and 100 W output match the original bill of materials, so RF link budgets, AGC loops, and alarms need no re-tuning. Stocking the -BR1 suffix variant in tape-and-reel form keeps automated rework lines fed.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MRF6S18100NBR1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MRF6S18100NR1 | MRF6S18100N | MRF5S21045NBR1 | MRF5S19060NBR1 | MRF6S27015GNR1 |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | TO-272 WB-4 | TO-272 WB-4 - same | TO-272 WB-4 - same | TO-272 WB-4 - same | TO-272 WB-4 - same | TO-272 WB-4 - same |
| Output Power (Pout) | 100 W | 100 W | 100 W | 45 W | 60 W | 15 W |
| Test Frequency | 1.99 GHz | 1.99 GHz | 1.99 GHz | 2.17 GHz | 1.99 GHz | 2.7 GHz |
| Test Supply Voltage | 28 V | 28 V | 28 V | 28 V | 28 V | 28 V |
| V(BR)DSS | 68 V | 68 V | 68 V | 65 V | 65 V | 65 V |
| Carrier Packaging | Tape & Reel (BR1) | Bulk Tray (R1) | Generic (no suffix) | Tape & Reel (BR1) | Tape & Reel (BR1) | Tape & Reel (NR1) |
| Lifecycle Status | Obsolete | Obsolete | Obsolete | Obsolete | Obsolete | Obsolete |
Wichtigste Unterscheidungsmerkmale
- 100 W pulsed output at 1.99 GHz from a single LDMOS die (vs. MRF5S21045NBR1)
- Same-package drop-in with identical electricals (vs. MRF6S18100NR1)
- Higher gain and ruggedness vs. lower-power same-family parts (vs. MRF6S27015GNR1)
Designhinweise
At 100 W pulsed RF output from a 28 V supply drawing roughly 5 A average, the MRF6S18100NBR1 can dissipate 30-50 W of DC power during high-duty-cycle EDGE operation. The TO-272 WB-4 flange must be bolted to an external heatsink or cold plate with thermal compound; the PCB copper pour under the flange is for ground, not primary heat removal. Estimated: junction-to-ambient without heatsink exceeds 40 C/W, which would place Tj above 150 C at full dissipation - mandatory to use a heatsink rated for the application.
Use an RF-grade substrate such as Rogers RO4003C 20 mil (or equivalent) for the matching networks. Keep gate and drain trace lengths below 1 mm to minimize parasitic inductance that detunes the input match and degrades stability. Place 100 pF and 10 nF decoupling capacitors as close as physically possible to the drain lead and to the gate bias feed-through; missing or distant decoupling is the most common cause of parametric oscillation in LDMOS PA designs.
Always apply drain voltage BEFORE gate voltage during turn-on (sequence bias). Reverse sequencing can leave the gate in a high-impedance state that allows parametric oscillation, potentially destroying the die. Also ensure the gate bias supply can be turned off within 1 microsecond of a detected overcurrent - the MRF6S18100NBR1 has no internal gate protection and is highly susceptible to thermal runaway when biased into a shorted RF load.
Match the manufacturer reference PCB stackup exactly: 20 mil RO4003C core, 1 oz copper on the RF layers, and a continuous ground pour on the bottom layer connected to the flange via a dense via array (>= 9 thermal vias, 12 mil diameter, 0.5 mm pitch). Deviating from the reference stackup will shift the output match center frequency by 50-100 MHz and reduce Pout by 5-10 dB at the target frequency.
Compliance-Informationen
RoHS compliant per NXP product page (Freescale legacy). AEC-Q100 not applicable (this is an RF power transistor, not an automotive-grade IC). Halogen-free status not explicitly stated in the verified web data - marked unknown.
