MRF6S19060NBR1 vs MRF6S19060NR1 Vergleich
Detaillierter Direktvergleich von MRF6S19060NBR1 von NXP Semiconductors und MRF6S19060NR1 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MRF6S19060NBR1 - 12W 1.93GHz RF Power MOSFET N-Channel TO-272
MRF6S19060NBR1 ✓ AktivSpezifikationsvergleich
| Parameter | MRF6S19060NBR1 | MRF6S19060NR1 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $28,90 | $25,10 |
| Transistortyp | N-Channel RF Power MOSFET | N-Channel LDMOS (RF Power) |
| Technology | Lateral Enhancement-Mode MOSFET | Lateral MOSFET, Enhancement Mode |
| Drain-Source Voltage (VDS) | 28 V | — |
| Drain Current (ID) | 610 mA | — |
| Frequency Range | 1930 MHz to 1990 MHz | 1930 MHz to 1990 MHz |
| Output Power (Average) | 12 W | — |
| Output Power (CW/Pulsed) | [DATA_NEEDED: CW/Pulsed peak power] | — |
| Power Gain | 16 dB typical at 1.93 GHz | — |
| Drain Efficiency | [DATA_NEEDED: drain efficiency] | >30% typical at P3dB |
| Gehäuse | TO-272 WB-4 (Wide-Body ceramic) | TO-270 WB-4 (4-lead over-molded plastic) |
| Operating Mode | Class AB / Class C | — |
| Montageart | Surface Mount | Surface Mount |
| ESD Protection | Yes (integrated) | — |
| Load Mismatch Tolerance | 5:1 VSWR (all phase angles) | — |
| RoHS-Status | Compliant | — |
| Lead Finish | [DATA_NEEDED: lead finish] | — |
| Betriebstemperatur | -40C to +150C (TJ) | — |
| Drain-to-Source Voltage (V DSS) | — | 68 V |
| Operating Drain Voltage (Test) | — | 28 V |
| Continuous Drain Current (I D) | — | [DATA_NEEDED: ID max] |
| Output Power (P AVG, N-CDMA) | — | 12 W average |
| Test Frequency | — | 1.93 GHz |
| Power Gain (Gps) at Test | — | 16 dB typical |
| Test Quiescent Current (I DQ) | — | 610 mA |
| Gate Threshold Voltage (V GS(th)) | — | [DATA_NEEDED: Vgs(th) value] |
| Lead Free / RoHS | — | Lead Free (per Freescale datasheet) |
| Application | — | N-CDMA, WCDMA, TDMA, CDMA base station amplifiers |