MRF6S19060NBR1 vs MRF6S19060NR1 Comparación
Comparación detallada lado a lado de MRF6S19060NBR1 por NXP Semiconductors y MRF6S19060NR1 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MRF6S19060NBR1 - 12W 1.93GHz RF Power MOSFET N-Channel TO-272
MRF6S19060NBR1 ✓ ActivoComparación de especificaciones
| Parámetro | MRF6S19060NBR1 | MRF6S19060NR1 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $28,90 | $25,10 |
| Tipo de transistor | N-Channel RF Power MOSFET | N-Channel LDMOS (RF Power) |
| Technology | Lateral Enhancement-Mode MOSFET | Lateral MOSFET, Enhancement Mode |
| Drain-Source Voltage (VDS) | 28 V | — |
| Drain Current (ID) | 610 mA | — |
| Frequency Range | 1930 MHz to 1990 MHz | 1930 MHz to 1990 MHz |
| Output Power (Average) | 12 W | — |
| Output Power (CW/Pulsed) | [DATA_NEEDED: CW/Pulsed peak power] | — |
| Power Gain | 16 dB typical at 1.93 GHz | — |
| Drain Efficiency | [DATA_NEEDED: drain efficiency] | >30% typical at P3dB |
| Encapsulado | TO-272 WB-4 (Wide-Body ceramic) | TO-270 WB-4 (4-lead over-molded plastic) |
| Operating Mode | Class AB / Class C | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| ESD Protection | Yes (integrated) | — |
| Load Mismatch Tolerance | 5:1 VSWR (all phase angles) | — |
| Estado RoHS | Compliant | — |
| Lead Finish | [DATA_NEEDED: lead finish] | — |
| Temperatura de funcionamiento | -40C to +150C (TJ) | — |
| Drain-to-Source Voltage (V DSS) | — | 68 V |
| Operating Drain Voltage (Test) | — | 28 V |
| Continuous Drain Current (I D) | — | [DATA_NEEDED: ID max] |
| Output Power (P AVG, N-CDMA) | — | 12 W average |
| Test Frequency | — | 1.93 GHz |
| Power Gain (Gps) at Test | — | 16 dB typical |
| Test Quiescent Current (I DQ) | — | 610 mA |
| Gate Threshold Voltage (V GS(th)) | — | [DATA_NEEDED: Vgs(th) value] |
| Lead Free / RoHS | — | Lead Free (per Freescale datasheet) |
| Application | — | N-CDMA, WCDMA, TDMA, CDMA base station amplifiers |