MRF6S19060NBR1 vs MRF6S19060NR1 Comparaison
Comparaison détaillée côte à côte de MRF6S19060NBR1 par NXP Semiconductors et MRF6S19060NR1 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF6S19060NBR1 - 12W 1.93GHz RF Power MOSFET N-Channel TO-272
MRF6S19060NBR1 ✓ ActifComparaison des spécifications
| Paramètre | MRF6S19060NBR1 | MRF6S19060NR1 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $28,90 | $25,10 |
| Type de transistor | N-Channel RF Power MOSFET | N-Channel LDMOS (RF Power) |
| Technology | Lateral Enhancement-Mode MOSFET | Lateral MOSFET, Enhancement Mode |
| Drain-Source Voltage (VDS) | 28 V | — |
| Drain Current (ID) | 610 mA | — |
| Frequency Range | 1930 MHz to 1990 MHz | 1930 MHz to 1990 MHz |
| Output Power (Average) | 12 W | — |
| Output Power (CW/Pulsed) | [DATA_NEEDED: CW/Pulsed peak power] | — |
| Power Gain | 16 dB typical at 1.93 GHz | — |
| Drain Efficiency | [DATA_NEEDED: drain efficiency] | >30% typical at P3dB |
| Boîtier | TO-272 WB-4 (Wide-Body ceramic) | TO-270 WB-4 (4-lead over-molded plastic) |
| Operating Mode | Class AB / Class C | — |
| Type de montage | Surface Mount | Surface Mount |
| ESD Protection | Yes (integrated) | — |
| Load Mismatch Tolerance | 5:1 VSWR (all phase angles) | — |
| Statut RoHS | Compliant | — |
| Lead Finish | [DATA_NEEDED: lead finish] | — |
| Température de fonctionnement | -40C to +150C (TJ) | — |
| Drain-to-Source Voltage (V DSS) | — | 68 V |
| Operating Drain Voltage (Test) | — | 28 V |
| Continuous Drain Current (I D) | — | [DATA_NEEDED: ID max] |
| Output Power (P AVG, N-CDMA) | — | 12 W average |
| Test Frequency | — | 1.93 GHz |
| Power Gain (Gps) at Test | — | 16 dB typical |
| Test Quiescent Current (I DQ) | — | 610 mA |
| Gate Threshold Voltage (V GS(th)) | — | [DATA_NEEDED: Vgs(th) value] |
| Lead Free / RoHS | — | Lead Free (per Freescale datasheet) |
| Application | — | N-CDMA, WCDMA, TDMA, CDMA base station amplifiers |