MRF6S19140HR3 vs MRF6S27085HR5 Vergleich

Detaillierter Direktvergleich von MRF6S19140HR3 von NXP Semiconductors und MRF6S27085HR5 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MRF6S27085HR5 MRF6S27085HR5 - 20W RF Power LDMOS 2.7GHz NI-780 | NXP

MRF6S27085HR5 - 20W RF Power LDMOS 2.7GHz NI-780 | NXP

MRF6S27085HR5 ✓ Aktiv

Spezifikationsvergleich

Parameter MRF6S19140HR3 MRF6S27085HR5
Marke NXP Semiconductors NXP Semiconductors
Kategorie RF MOSFETs MOSFETs
Lebenszyklusstatus Obsolete Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $25,20 $21,85
Transistortyp LDMOS N-Channel Enhancement-Mode Lateral MOSFET LDMOS, N-Channel RF Power
Frequency Range 1.93 GHz to 1.99 GHz (1930-1990 MHz) —
Drain-Source Voltage (Max Rated) 68 V —
Test Drain Voltage (Vdd) 28 V —
Test Drain Current 1.15 A —
Power Output (Pout, Avg) 29 W —
Power Gain 16 dB (typ) —
Wirkungsgrad [DATA_NEEDED: drain efficiency %] —
Gehäuse / Bauform NI-880H-2L (CASE 465B-03, STYLE 1), ceramic with flange NI-780H-2L (ceramic acorn)
Pin-Anzahl 3 2-lead + flange
Montageart Chassis / Stud-Mount (ceramic flange, bolt-down thermal) Chassis / Flange Mount
Application Class Class AB, PCN/PCS base-station, TDMA/CDMA, multi-carrier —
Operating Mode CW / pulsed RF amplifier —
Original Manufacturer Freescale Semiconductor (now NXP) —
Lead / Termination Finish Gold-plated (per datasheet case drawing) —
MSL [DATA_NEEDED: MSL rating] —
RoHS-Status [DATA_NEEDED: RoHS compliance status] Compliant (per distributor listing)
HSL/R3 Suffix R3 = 13" tape and reel —
Datasheet Document MRF6S19140H.pdf (NXP/Freescale) —
Datasheet Length 12 pages (per third-party datasheet index) —
Technology — HV6 LDMOS
Rated Drain-Source Voltage (Vdss) — 68 V
Test Supply Voltage (Vdd) — 28 V
Test Quiescent Current (Idq) — 900 mA
Operating Frequency Range — 2500 MHz to 2700 MHz
Test Frequency — 2660 MHz
Output Power (Pout) — 20 W (CW)
Small-Signal Gain — 15.5 dB at 2.66 GHz
Lead Free Status — Lead-free (per distributor listing)
Peak Reflow Temperature — 260 C
Time at Peak Reflow — 40 s maximum
Application — W-CDMA / multi-carrier base-station PA

Datenblätter & Ressourcen

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