MRF6S19140HR3 vs MRF6S27085HR5 Comparación
Comparación detallada lado a lado de MRF6S19140HR3 por NXP Semiconductors y MRF6S27085HR5 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MRF6S19140HR3 - 29W LDMOS RF MOSFET 1.93-1.99GHz | NXP Semiconductors
MRF6S19140HR3 Obsolete
Comparación de especificaciones
| Parámetro | MRF6S19140HR3 | MRF6S27085HR5 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | RF MOSFETs | MOSFETs |
| Estado del ciclo de vida | Obsolete | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $25,20 | $21,85 |
| Tipo de transistor | LDMOS N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel RF Power |
| Frequency Range | 1.93 GHz to 1.99 GHz (1930-1990 MHz) | — |
| Drain-Source Voltage (Max Rated) | 68 V | — |
| Test Drain Voltage (Vdd) | 28 V | — |
| Test Drain Current | 1.15 A | — |
| Power Output (Pout, Avg) | 29 W | — |
| Power Gain | 16 dB (typ) | — |
| Eficiencia | [DATA_NEEDED: drain efficiency %] | — |
| Encapsulado / Carcasa | NI-880H-2L (CASE 465B-03, STYLE 1), ceramic with flange | NI-780H-2L (ceramic acorn) |
| Recuento de pines | 3 | 2-lead + flange |
| Tipo de montaje | Chassis / Stud-Mount (ceramic flange, bolt-down thermal) | Chassis / Flange Mount |
| Application Class | Class AB, PCN/PCS base-station, TDMA/CDMA, multi-carrier | — |
| Operating Mode | CW / pulsed RF amplifier | — |
| Original Manufacturer | Freescale Semiconductor (now NXP) | — |
| Lead / Termination Finish | Gold-plated (per datasheet case drawing) | — |
| MSL | [DATA_NEEDED: MSL rating] | — |
| Estado RoHS | [DATA_NEEDED: RoHS compliance status] | Compliant (per distributor listing) |
| HSL/R3 Suffix | R3 = 13" tape and reel | — |
| Datasheet Document | MRF6S19140H.pdf (NXP/Freescale) | — |
| Datasheet Length | 12 pages (per third-party datasheet index) | — |
| Technology | — | HV6 LDMOS |
| Rated Drain-Source Voltage (Vdss) | — | 68 V |
| Test Supply Voltage (Vdd) | — | 28 V |
| Test Quiescent Current (Idq) | — | 900 mA |
| Operating Frequency Range | — | 2500 MHz to 2700 MHz |
| Test Frequency | — | 2660 MHz |
| Output Power (Pout) | — | 20 W (CW) |
| Small-Signal Gain | — | 15.5 dB at 2.66 GHz |
| Lead Free Status | — | Lead-free (per distributor listing) |
| Peak Reflow Temperature | — | 260 C |
| Time at Peak Reflow | — | 40 s maximum |
| Application | — | W-CDMA / multi-carrier base-station PA |