MRF6S19140HR3 vs MRF6S27085HR5 Comparaison
Comparaison détaillée côte à côte de MRF6S19140HR3 par NXP Semiconductors et MRF6S27085HR5 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF6S19140HR3 - 29W LDMOS RF MOSFET 1.93-1.99GHz | NXP Semiconductors
MRF6S19140HR3 Obsolete
Comparaison des spécifications
| Paramètre | MRF6S19140HR3 | MRF6S27085HR5 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | RF MOSFETs | MOSFETs |
| Statut du cycle de vie | Obsolete | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $25,20 | $21,85 |
| Type de transistor | LDMOS N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel RF Power |
| Frequency Range | 1.93 GHz to 1.99 GHz (1930-1990 MHz) | — |
| Drain-Source Voltage (Max Rated) | 68 V | — |
| Test Drain Voltage (Vdd) | 28 V | — |
| Test Drain Current | 1.15 A | — |
| Power Output (Pout, Avg) | 29 W | — |
| Power Gain | 16 dB (typ) | — |
| Rendement | [DATA_NEEDED: drain efficiency %] | — |
| Boîtier / Format | NI-880H-2L (CASE 465B-03, STYLE 1), ceramic with flange | NI-780H-2L (ceramic acorn) |
| Nombre de broches | 3 | 2-lead + flange |
| Type de montage | Chassis / Stud-Mount (ceramic flange, bolt-down thermal) | Chassis / Flange Mount |
| Application Class | Class AB, PCN/PCS base-station, TDMA/CDMA, multi-carrier | — |
| Operating Mode | CW / pulsed RF amplifier | — |
| Original Manufacturer | Freescale Semiconductor (now NXP) | — |
| Lead / Termination Finish | Gold-plated (per datasheet case drawing) | — |
| MSL | [DATA_NEEDED: MSL rating] | — |
| Statut RoHS | [DATA_NEEDED: RoHS compliance status] | Compliant (per distributor listing) |
| HSL/R3 Suffix | R3 = 13" tape and reel | — |
| Datasheet Document | MRF6S19140H.pdf (NXP/Freescale) | — |
| Datasheet Length | 12 pages (per third-party datasheet index) | — |
| Technology | — | HV6 LDMOS |
| Rated Drain-Source Voltage (Vdss) | — | 68 V |
| Test Supply Voltage (Vdd) | — | 28 V |
| Test Quiescent Current (Idq) | — | 900 mA |
| Operating Frequency Range | — | 2500 MHz to 2700 MHz |
| Test Frequency | — | 2660 MHz |
| Output Power (Pout) | — | 20 W (CW) |
| Small-Signal Gain | — | 15.5 dB at 2.66 GHz |
| Lead Free Status | — | Lead-free (per distributor listing) |
| Peak Reflow Temperature | — | 260 C |
| Time at Peak Reflow | — | 40 s maximum |
| Application | — | W-CDMA / multi-carrier base-station PA |