MRF6S21050LSR5 vs MRF6S21050LR5 Vergleich
Detaillierter Direktvergleich von MRF6S21050LSR5 von NXP Semiconductors und MRF6S21050LR5 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MRF6S21050LSR5 - 11.5W W-CDMA RF Power MOSFET | NXP | NI-400S
MRF6S21050LSR5 ✓ AktivSpezifikationsvergleich
| Parameter | MRF6S21050LSR5 | MRF6S21050LR5 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $51,40 | $21,40 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| Transistortyp | N-Channel Enhancement-Mode Lateral MOSFET | N-Channel RF Power MOSFET (LDMOS) |
| Technology | LDMOS (Laterally Diffused MOSFET) | HV6 LDMOS |
| Drain-Source Voltage (VDS) Maximum | 65 V | — |
| Gate-Source Voltage (VGS) Maximum | [DATA_NEEDED: VGS max rating] | — |
| Nominal Operating Drain Voltage | 28 V | — |
| Typical Operating Frequency | 2.16 GHz (2110-2170 MHz W-CDMA band) | — |
| Power Gain (Gps) | 16 dB typical at 2.16 GHz | — |
| Output Power (Pout) | 11.5 W CW | 11.5 W |
| Drain Current (ID) at Test | 450 mA | — |
| Gehäuse / Bauform | NI-400S (ceramic, 2-flange) | NI-400 (ceramic flanged) |
| Montageart | Surface Mount / Screw-Mount | Flange mount, chassis-mount |
| Application | W-CDMA, TDMA, CDMA, multicarrier base-station PA | — |
| Configuration | Single, Common Source | Single N-channel |
| RoHS-Status | Compliant | Compliant (per distributor listing) |
| Lead-Free | Yes | — |
| Operating Mode | Class AB | — |
| MSL Rating | [DATA_NEEDED: MSL level] | — |
| Drain-Source Voltage (Vdss) | — | 28 V |
| Continuous Drain Current (Id) | — | 450 mA |
| Power Gain (Gp) | — | 16 dB at 2.16 GHz |
| Operating Frequency | — | 2.16 GHz (W-CDMA band) |
| Test Conditions | — | 2.16 GHz, 28 V, W-CDMA modulation |
| Eingangskapazität | — | [DATA_NEEDED: input capacitance] |
| Ausgangskapazität | — | [DATA_NEEDED: output capacitance] |
| Thermal Resistance (Rthj-c) | — | [DATA_NEEDED: junction-to-case thermal resistance] |
| Betriebstemperaturbereich | — | -40C to +150C (junction) |
| MSL-Level | — | Not applicable (ceramic flanged) |
| ESD Protection | — | Yes (integrated, per device family) |